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Mark H. Somerville, Alexander Ernst, and Jesus A. del Alamo, "A Physical Model for the Kink Effect in InAlAs/InGaAs HEMT's," IEEE Tansactions on Electron Devices, vol. 47, no. 5, pp. 922-929, May 2000.
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"GaAs 기반 In0.52Al0.48As/In0.53Ga0.47As 이종접합 구조를 갖는 MHEMT 소자의 DC 특성에 대한 calibration 연구", 반도체디스플레이기술학회지, 10 권, 1호, pp.63-73, 2011년 3월
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ISE-DESSIS manual, pp. 12-288, Ver. 9.5
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C.S. Whelan, P.F. Marsh, W.E. Hoke, R.A. McTaggart, C.P. McCarroll, T.E. Kazior,"GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications," Proceedings of 2000 International Conference on Indium Phosphide and Related Materials, pp.337-340, May 14-18, 2000.
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