• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.4
• /
• pp.67-72
• /
• 1989

Room Temperature Plasma Nitridation of silicon was investigated as a new LOCOS (local oxidation of silicon) process in order to reduce the bird's beak length. In $N_2$ plasma formed by 100kHz, 400W AC power, a thin silicon nitride film (<100${\AA}$) was uniformly grown on a silicon substrate. SEM studies showed that the nitride layer formed by this method can effectively protect the silicon from oxidation and reduce the bird's beak length to $0.2{mu}m$ when 4000${\AA}$ field oxide is grown. This is a considerable improvement comparing with 0.7${mu}m,$ the bird's beak, for the conventional LOCOS process using a thick LPCVD nitride. No appreciable crystalline defect could be found around the bird's beak with SEM cross-section afrer Secco etch. Leakage current tests were carried out on the $N^+/P^-$ well and $P^+/N^-$ well diodes formed by this new LOCOS process. The electrical tests indicate that this new process has electrical properties similar or superior to those of the conventional LOCOS process.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.40-47
• /
• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Archives of Pharmacal Research
• /
• v.29 no.11
• /
• pp.1055-1060
• /
• 2006

The objective of this study was to formulate itraconazole semisolid dosage forms and characterize their physicochemical properties. Itraconazole and excipients such as polysorbate 80, fatty acids, fatty alcohols, oils and organic acids were melted at $160^{\circ}C$. The fused solution was then cooled immediately at $-10^{\circ}C$ to make wax-like semisolid preparations. Their physicochemical attributes were first characterized using differential scanning calorimetry, Fourier transform infrared spectroscopy and nuclear magnetic resonance spectrometry. The solubility of itraconazole in semisolid preparations and their dispersability in the simulated gastric fluid were also determined. Our semisolid preparations did not show any distinct endothermic peak of a crystalline form of itraconazole around $160-163^{\circ}C$. This suggested that it was changed into amorphous one, when it was formulated into semisolid preparations. In addition, the distinctive functional peaks and chemical shifts of itraconazole were well retained after processing into semisolid preparations. It could be inferred from the data that itraconazole was stable during incorporation into semisolid preparations by the hot melt technique. In particular, itraconazole semisolid preparations composed of polysorbate 80, fatty acids and organic acids showed good solubility and dissolution when dispersed in an aqueous medium. It was anticipated that the semisolid dosage forms would be industrially applicable to improving the bioavailability of poorly water-soluble drugs.

• Membrane Journal
• /
• v.27 no.6
• /
• pp.469-476
• /
• 2017

Membrane separation is a technology of low energy consumption. Membranes made of zeolites are of great interest because their fixed and open pores in the size of small molecules inside crystalline structures allow separation processes under harsh conditions. While zeolite NaA (LTA-type) is industrially used for dewatering of organic solvents, its pore size and thermal and hydrothermal stability can be tuned by exchange of framework and extra-framework elements. SOD with pores of only 0.28 nm is of great interest for $H_2$- und $H_2O$-separation and also can be tuned by ion exchange. Zeolites open the opportunity to create membranes of adapted separation behavior for small molecules in conditions of surrounding technical processes.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.191-196
• /
• 2001

GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at $1000^{\circ}C$ in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about $80\textrm{cm}^2$/V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

• Korean Journal of Materials Research
• /
• v.15 no.12
• /
• pp.796-801
• /
• 2005

In order to reduce the weight of glass in architecture, automobile, bottles, displays, a new technique that can strengthen glass was developed using various method. Generally, the strength achieved of glass-ceramics is higher as is 1.he fracture toughness by the formation of a crystalline phase inside glass. In this study, $70SiO_2-20Na_2O-10CaO-10TiO_2$ glasses were irradiated to strengthen by heterogeneous phase using femto-second laser pulse. Laser pulse irradiation of samples was analyzed by DTA, TMA, XRD, nano-indenter and SEM. Samples irradiated by laser had lower value$(3\~4\times10^{-3}Pa)$ of nano indentation which related with mother glass$(8\times10-3Pa)$ than values. Microcracks were occurred around laser irradiation area when femtosecond laser with the repetition rate of 1kHz was used as the light source to induced heterogeneous phase.

• Electrical & Electronic Materials
• /
• v.9 no.7
• /
• pp.690-695
• /
• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1990.10a
• /
• pp.98-101
• /
• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2011.05a
• /
• pp.142-142
• /
• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• Journal of Sensor Science and Technology
• /
• v.12 no.5
• /
• pp.199-204
• /
• 2003

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097-1.21\;mV/V{\codt}kgf/cm^2$ in the temperature range of $25-200^{\circ}C$ and the maximum non-linearity is 0.43%FS.