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http://dx.doi.org/10.5573/JSTS.2014.14.1.040

A Novel Atomic Layer Deposited Al2O3 Film with Diluted NH4OH for High-Efficient c-Si Solar Cell  

Oh, Sung-Kwen (Dep. EE., Chungnam National University)
Shin, Hong-Sik (Dep. EE., Chungnam National University)
Jeong, Kwang-Seok (Dep. EE., Chungnam National University)
Li, Meng (Dep. EE., Chungnam National University)
Lee, Horyeong (Dep. EE., Chungnam National University)
Han, Kyumin (Dep. EE., Chungnam National University)
Lee, Yongwoo (Dep. EE., Chungnam National University)
Lee, Ga-Won (Dep. EE., Chungnam National University)
Lee, Hi-Deok (Dep. EE., Chungnam National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.1, 2014 , pp. 40-47 More about this Journal
Abstract
In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.
Keywords
Solar cell; $Al_2O_3$; $NH_4OH$; passivation layer; anti-reflection coating;
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