Browse > Article
http://dx.doi.org/10.5369/JSST.2003.12.5.199

Fabrication of a micromachined ceramic thin-film type pressure sensor for high overpressure tolerance and Its characteristics  

Kim, Jae-Min (School of Information and System Engineering, Dongseo University)
Chung, Gwiy-Sang (School of Information and System Engineering, Dongseo University)
Publication Information
Journal of Sensor Science and Technology / v.12, no.5, 2003 , pp. 199-204 More about this Journal
Abstract
This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097-1.21\;mV/V{\codt}kgf/cm^2$ in the temperature range of $25-200^{\circ}C$ and the maximum non-linearity is 0.43%FS.
Keywords
ceramic pressure sensor; strain-gauge; Ta-N thin-film; buried cavity; overpressure protector;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 H. Sandmaier and K. Kuhl. 'Piezoresi-stive low-pressure sensor with high sensitivity and high accuracy', Sensors & Actuators A. vol. 23, pp. 142-145, 1990
2 K. Matsuda, Y. Kanda, K. Yamamura and K. Suzaki, 'Second-order piezoresis-tance coefficients of the n-tvpe silicon'. Jpn. J. Appl. Phvs., vol. 28, pp. 1676-1677, 1989   DOI
3 G. S. Chung. 'Thin SOl structures for sensing and integrated circuit applications', Sensors & Actuators A. vol. 39. pp. 241-251. 1993   DOI   ScienceOn
4 Q. Chen, R. Shi, Z. Teng and H. Xu, 'High reliability SOS pressure sensor', Semiconductor Technology. vol. 4, pp. 33-37. 1990
5 V. Mosser, J. Suski, and J. Goss. 'Piezo-resistive pressure sensors based on polycrystalline silicon', Sensors & Actuators A, vol. 28, pp. 113-132, 1991   DOI   ScienceOn
6 S. Sampath and K. V. Ramanaiah, 'Behaviour of Bi-Sb alloy thin-film as strain gauges.' Thin-Solid Films. vol. 137, pp. 199-205, 1986   DOI   ScienceOn
7 K. Rajanna. S. Mohan, M. M. Nayak, N. Gunasekaran and A. E. Muthunayagam, 'Pressure transducer with Au-Ni thin-film, strain gauges'. IEEE Trans. Electron Devices, vol. 40, pp. 521-524, 1993   DOI   ScienceOn
8 K. Rajanna and S. Mohan, 'Thin-film pressure transducer with manganese film as the strain gauge', Sensors & Actuators A, vol. 24, pp. 35-39, 1990   DOI   ScienceOn
9 W. Hongye. L. Kun, A. Zhichou. W. Xu and H. Xun, 'Ion-beam sputtered thin-film Strain gauge pressure transducers', Sensors & Actuators A, vol. 35, pp . 265-268, 1993   DOI   ScienceOn
10 H. Konishi, T. Suzuki and M. Utsunomiya. 'Constantan thin-film strain gauge load cell'. Tech. Dig. of the 9th Sensor Symposium, pp. 149-152. 1990
11 J. H. Kim, S. K. Choi, H. D. Nam and G. S. Chung. 'Fabrication of tantalum nitride thin-films as high temperature strain gauges', Pro. of the KIEEME Annual Autumn Conference, pp. 97-100, 2001
12 G. S. Chung, K. D. Kang and S. K. Choi, 'Fabrication of SOl structures with buried cavities for microsystems by SDB and Electrochemical Etch-stop', J. Korean sensors society, vol. 11, pp. 54-59, 2002   DOI
13 T. Ishihara, K. Suzaki, S. Suwazono, M Hirata and H. Taningawa, 'CMOS integrated silicon pressure sensor', IEEE J. Solid-State Circuit, SC-22, pp. 151-156, 1987
14 I. Obieta and F. J. Gracia, 'Sputtered silicon thin-film for piezoresistive pressure microsensors', Sensors & Actuators A, vol. 41, pp. 521-688, 1994
15 N. M. White and J. E. Brignell , 'A planar thick-film load cell', Sensors & Actuators A, vol. 25-27, pp. 313-319, 1991