• Title/Summary/Keyword: conversion gain

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Development of Environmental Control Systems for Windowless Pig-housing (II) - Growth Performance of Weaned Piglets and Growing Pigs - (무창돈사의 환경제어 시스템 개발 (II) - 자돈과 육성돈의 사양성적 -)

  • 장동일;장홍희;임영일;박창식;이봉덕;이형석
    • Journal of Biosystems Engineering
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    • v.24 no.5
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    • pp.425-430
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    • 1999
  • Complex environmental control systems were developed, which control properly the pig's environment in windowless pig-housing based on the thermoregulatory behaviors of pigs and concentrations of noxious gases (CO2 and NH3). The this study was conducted to assess the performance of complex environmental control systems by raising weaned piglets and growing pigs under different seasonal conditions. Average daily gain of pigs in the experimental pig-housing was slightly higher than that of pigs in the conventional pig-housing. Average daily gain was not significantly different in winter and spring(P>0.05), but was significantly different in summer(P<0.05). Feed conversion rate of pigs in the experimental pig-housing was smaller than that of pigs in the conventional pig-housing. Feed conversion rate was not significantly different in environment for weaned piglets and growing pigs resulted in the improved daily gain, feed conversion rate, and carcass quality of the finishing pigs. These results showed that the performance of the complex environmental control systems in windowless pig-housing was excellent for weaned piglets and growing pigs.

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An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib;Ryu, Jee-Youl
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.595-604
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    • 2016
  • Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

Design and Fabrication of Low LO Power V-band CPW Mixer Module

  • Dan An;Lee, Bok-Hyung;Chae, Yeon-Sik;Park, Hyun-Chang;Park, Hyung-Moo;Chun, Young-Hoon;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.1133-1136
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    • 2002
  • We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.

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A Study on Design of Reflector Type Frequency Doubler in K-Band (리플렉터 형태의 K-대역 주파수 체배기 구현에 관한 연구)

  • Han, Sok-Kyun;Choi, Hyung-Ha
    • Journal of Navigation and Port Research
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    • v.28 no.1
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    • pp.37-41
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    • 2004
  • In this paper, a reflector type frequency doubler for local oscillator at 24GHz is designed and fabricated with ne71300-N MESFET. Optimum source and load impedances are decided through a multiharmonic load pull simulation technique. A conversion gain can be improved using the reflector and fundamental and third harmonics are well suppressed with open stub of $\lambda$/4 length Measured results show output power at 0dBm of input power is -3.776dBm, conversion gain 0.736dB, harmonic suppression 41.064dBc, respectively.

A 3~5 GHz UWB Up-Mixer Block Using 0.18-μm CMOS Technology

  • Kim, Chang-Wan
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.91-95
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    • 2008
  • This paper presents a direct-conversion I/Q up-mixer block, which supports $3{\sim}5$ GHz ultra-wideband(UWB) applications. It consists of a VI converter, a double-balanced mixer, a RF amplifier, and a differential-to-single signal converter. To achieve wideband characteristics over $3{\sim}5$ GHz frequency range, the double-balanced mixer adopts a shunt-peaking load. The proposed RF amplifier can suppress unwanted common-mode input signals with high linearity. The proposed direct-conversion I/Q up-mixer block is implemented using $0.18-{\mu}m$ CMOS technology. The measured results for three channels show a power gain of $-2{\sim}-9$ dB with a gain flatness of 1dB, a maximum output power level of $-7{\sim}-14.5$ dBm, and a output return loss of more than - 8.8 dB. The current consumption of the fabricated chip is 25.2 mA from a 1.8 V power supply.

Oxidation Behavior of UO$_2$in Air at 300~55$0^{\circ}C$

  • Kang, Kweon-Ho;Hwang, Suk-Youl;Kim, Kil-Jeong
    • Journal of Energy Engineering
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    • v.6 no.2
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    • pp.198-202
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    • 1997
  • The oxidation behavior of UO$_2$pellets was studied using a thermogravimetric analyzer and an XRD in the temperature range of 300 to 550$^{\circ}C$ in air. From XRD studies it is found that UO$_2$is converted to U$_3$O$\_$8/ and the weight gains of UO$_2$specimen are characterized by S-shape curves. After complete oxidation the specimens broke into fine powder and the average weight gain was about 3.93 wt%. The activation energy of 50% conversion of UO$_2$to U$_3$O$\_$8/ is 81.6 kJ/mol and the oxidation rate per unit time was found to be as follows dw/dt=6.54${\times}$10$\^$6/ e (equation omitted), wt%/h : at 50% conversion of UO$_2$into U$_3$O$\_$8/ where w, t and T were wt% gain, conversion time and temperature, respectively.

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Super-High-Speed Lightwave Demodulation using the Nonlinearities of an Avalanche Photodiode

  • Park, Young-Kyu
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.273-278
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    • 2002
  • Even though the modulating signal frequency of the light is too high to detect directly, the signal can be extracted by frequency conversion at the same time as the detection by means of the non-linearity of the APD. An analysis is presented for super-high-speed optical demodulation by an APD with electronic mixing. A normalized gain is defined to evaluate the performance of the frequency conversion demodulation. The nonlinear effect of the internal capacitance was included in the small signal circuit analysis. We showed theoretically and experimentally that the normalized gain is dependent on the down converted difference frequency component. In the experiment, the down converted different frequency outputs became larger than the directly detected original signal for the applied local signal of 20㏈m.

Design of 900MHz CMOS RF Front-End IC for Digital TV Tuner (디지털 TV 튜너용 900MHz CMOS RF Front-End IC의 설계 및 구현)

  • 김성도;유현규;이상국
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.104-107
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    • 2000
  • We designed and implemented the RFIC(RF front-end IC) for DTV(Digital TV) tuner. The DTV tuner RF front-end consists of low noise IF amplifier fur the amplification of 900 MHz RF signal and down conversion mixer for the RF signal to 44MHz IF conversion. The RFIC is implemented on ETRI 0.8u high resistive (2㎘ -cm) and evaluated by on wafer, packaged chip test. The gain and IIP3 of IF amplifier are 15㏈ and -6.6㏈m respectively. For the down conversion mixer gain and IIP3 are 13㏈ and -6.5㏈m. Operating voltage of the IF amplifier and the down mixer is 5V, current consumption are 13㎃ and 26㎃ respectively.

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High-gain polarization conversion metasurface

  • Chen, Aixin;Ning, Xiangwei;Liu, Xin;Zhang, Zhe
    • ETRI Journal
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    • v.41 no.2
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    • pp.160-166
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    • 2019
  • A novel analytical method based on the cavity mode theory to design a metasurface (MS) is proposed in this study. We carefully analyzed the phase and amplitude characteristics of the incident wave and transmitted wave, and successfully designed a circular polarization conversion MS by introducing a cutting structure with wider operation bandwidth and higher radiation direction gain compared with that of the original MS. For the measurements, a microstrip antenna operating at 2.4 GHz was used as the source antenna to verify the designed MS. The simulation and measurement results agree well with each other.

Design and Fabrication of a MIC Gate Mixer Using GaAs MESFET (GaAs MESFET을 이용한 MIC 게이트 Mixer의 설계 및 제작)

  • Park, Han Kyu;Kim, Nam Su
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.868-873
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    • 1986
  • The Schottky barrier diode has been used as an element of the mixer inspite of its conversion loss. In this paper the use of a GaAs MESFET is shown as a device of mixer, and the conversion gain is obtained. Also, input matching circuits aredesigned by s-parameter and fabricated on a dielectric teflon epoxy fiber glass substrate. According to the results, the conversion gain is 9 dB at the signal frequency of 4 GHz and the intermediate frequency of 1.217GHz.

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