Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Design and Fabrication of a MIC Gate Mixer Using GaAs MESFET

GaAs MESFET을 이용한 MIC 게이트 Mixer의 설계 및 제작

  • Park, Han Kyu (Dept. of Elec. Eng., Yonsei Univ.) ;
  • Kim, Nam Su (Dept. of Elec. Eng., Yonsei Univ.)
  • 박한규 (연세대학교 전자공학과) ;
  • 김남수 (연세대학교 전자공학과)
  • Published : 1986.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

The Schottky barrier diode has been used as an element of the mixer inspite of its conversion loss. In this paper the use of a GaAs MESFET is shown as a device of mixer, and the conversion gain is obtained. Also, input matching circuits aredesigned by s-parameter and fabricated on a dielectric teflon epoxy fiber glass substrate. According to the results, the conversion gain is 9 dB at the signal frequency of 4 GHz and the intermediate frequency of 1.217GHz.

Keywords