• 한국세라믹학회지
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• 제48권4호
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• pp.312-315
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• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• 한국입자에어로졸학회지
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• 제9권4호
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• pp.261-269
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• 2013

The chemical mechanical polishing (CMP) process is widely used in semiconductor manufacturing process for planarization of various materials and structures. Point-of-use (POU) filters are used in most of the CMP processes in order to reduce the unwanted micro-scratches which may result in defects. The performance of the POU filter is depends on type and size of the abrasives used during cleaning process. For this reason, there is a need to evaluate POU filters for their filtration efficiency (FE) with different types of abrasives. In this study, we developed filter test system to evaluate the FE of POU using ceria and silica abrasives (slurry). The POU filter is roll type capsule filter with retention size of 0.2 ${\mu}m$. Two POU filters of different make are evaluated for FE. We observed that both POU filters show similar filtration efficiency for silica and ceria slurry. Results reveal that the ceria slurry and the colloidal silica particle are removed not only by mechanical way but also hydrodynamic and electrostatic interaction way.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.233-236
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• 2004

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.

• Tribology and Lubricants
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• 제34권6호
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• pp.226-234
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• 2018

Copper chemical mechanical planarization (CMP) has become a key process in integrated circuit (IC) technology. The results of copper CMP depend not only on the mechanical abrasion, but also on the slurry chemistry. The slurry used for Cu CMP is known to have greater chemical reactivity than mechanical material removal. The Cu CMP slurry is composed of abrasive particles, an oxidizing agent, a complexing agent, and a corrosion inhibitor. Citric acid can be used as the complexing agent in Cu CMP slurries, and is widely used for post-CMP cleaning. Although many studies have investigated the effect of citric acid on Cu CMP, no studies have yet been conducted on the interfacial friction characteristics and step height reduction in CMP patterns. In this study, the effect of citric acid on the friction characteristics and step height reduction in a copper wafer with varying pattern densities during CMP are investigated. The prepared slurry consists of citric acid ($C_6H_8O_7$), hydrogen peroxide ($H_2O_2$), and colloidal silica. The friction force is found to depend on the concentration of citric acid in the copper CMP slurry. The step heights of the patterns decrease rapidly with decreasing citric acid concentration in the copper CMP slurry. The step height of the copper pattern decreases more slowly in high-density regions than in low-density regions.

• 유기물자원화
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• 제30권3호
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• pp.5-12
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• 2022

본 연구에서는 반도체를 포함한 다양한 산업 분야에서 발생하는 슬러지 폐기물을 활용하여 고부가 가치의 균일한 콜로이달 실리카 나노입자를 제조하고자 하였다. 상세히는 슬러지 폐기물에서 고분자를 용해하여 추출한 실리카(s-SiO₂)를 분리하였고, 암모니아와 소니케이터를 활용한 에칭을 통해 실라놀 전구체를 추출하였다. 실라놀 전구체를 활용하여 졸-겔법으로 균일한 약 50nm 크기의 실리카 나노입자(n-SiO₂)를 성공적으로 합성되었음을 확인할 수 있었다. 또한, s-SiO₂의 에칭 시간에 따른 n-SiO₂의 수득량을 확인하였으며, 8시간의 에칭 시간에서 가장 많은 n-SiO₂가 제조되는 것을 확인할 수 있었다. 최종적으로 n-SiO₂를 기반으로 한 CMP용 슬러리를 제조하여, 반도체 칩의 연마에 활용하였다. 그 결과, 반도체 칩의 표면에 존재하던 빗살 무늬의 데미지들이 성공적으로 제거되었으며, 이를 통해 슬러지 폐기물에서 고부가 가치의 반도체 급 n-SiO₂ 소재가 성공적으로 제조되었음을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.1-4
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• 2003

The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H$_2$O$_2$) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H$_3$PO$_4$) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2$\^$nd/ step copper CMP slurry and hydrogen peroxide stability.

• 한국세라믹학회지
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• 제49권6호
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• pp.542-548
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• 2012

The viscosity of a ceramic slurry depends on the slurry concentration, particle shape and size, hydrodynamic interactions, temperature, shear rate, pre-treatment condition and the method of measurement with the selected equipment. Representative ceramic slurries with low to high viscosity levels are selected from colloidal silica, barium titanate slurry and glass frit paste. Rotational rheometers and vibrational viscometers are used to compare the measured viscosity for various ceramic slurries. The rotational rheometer measured the viscosity according to the change of the shear rate or the rotational speed. On the other hand, the vibrational viscometer measured one point of the viscosity in a fixed vibrational mode. The rotational rheometer allows the measurement of the viscosity of a ceramic paste with a viscosity higher than 100,000 cP, while the vibrational viscometer provides an easy and quick method to measure the viscosity without deformation of the ceramic slurry due to the measurement method. It is necessary to select suitable equipment with which to measure the viscosity depending on the purpose of the measurement.

• 한국주조공학회지
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• 제28권6호
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• pp.282-287
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• 2008

The effect of CaO mold on the formation of reaction layer was investigated. CaO mold was prepared by mixing of Colloidal silica($NALCO^{(R)}$ 1130) and an $ZrO_2$, CaO at room temperature. The dried at $20{\pm}3^{\circ}C$, 75% humidity for 12hrs. Sample was prepared from the Cp-Ti(grade-2) and melted by high frequence induction melting system in the vacuum condition. The react ion layer of Ti was confirmed by optical microscopy, microhardness(Hv) and X-ray diffraction. Thickness of reaction layer using the CaO stabilized ZrO2 was thinner than the CaO added ZrO2. And thickness of reaction layer were decreased with decreasing pH of slurry. CaO addition in the slurry could not controlled reaction between molten Ti and investment mold. On the other hand, the CaO chemical bonded ZrO2 by stabilization treatment could controlled reaction between molten Ti and investment mold.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.49-50
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• 2006

The studies on Cu CMP have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate the roles of slurry components in the formation of the uniformity in Cu CMP. All the results of in this study showed that the uniformity in Cu CMP could be controlled by the contents of slurry components.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.141-141
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• 2009

Blue light-emitting diodes (LEDs), violet laser diodes 같은 광전소자들은 질화물 c-plane 기판위에 소자로 응용되어 이미 상품화 되어 왔다. 그러나 2족-질화물 재료들은 wurtzite 구조를 가지므로 c-plane에 평행한 자연적인 극성을 띌 뿐만 아니라 결정 내부 stress로 인한 압전현상 또한 나타나 큰 내부 전기장을 형성하게 된다. 이렇게 생성된 내부 전기장은 전자와 홀의 재결합 효율을 감소시키고 소자 응용 시 red-shift의 원인이 되곤 한다. 따라서 최근 들어 m-plane(1-100), a-plane (11-20)같은 무극성을 뛰는 기판 위에 소자를 만드는 방법이 각광을 받고 있는 추세다. 그러나 무극성 기판을 소자에 응용 시 Chemical Mechanical Planarization (CMP)에 의한 가공은 반도체 기판으로써 이용하기 위한 필수 불가결의 공정이다. c면(0001) SiC wafer에 대한 연구는 현재 많이 발표가 되어 있으나 무극성면 SiC wafer에 대한 CMP 공정에 대한 연구사례는 없는 실정이다. 본 연구에서는 C면 (0001)으로 성장된 잉곳을 a면(11-20)과 m(1-100)면으로 절단 후, slurry type (KOH-based colloidal silica slurry, NaOCl), 산화제, 연마제등을 변화하여 CMP 공정을 거침으로서 일어나는 기계 화학적 가공 양상에 대하여 알아보았다. 그 후 표면 형상 분석 하기위해 Atomic Force Microscope(AFM)을 사용하였고, 표면 스크레치를 SEM을 이용해서 알아보았다.