Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Roles of Phosphoric Acid in Slurry for Cu and TaN CMP

  • Kim, Sang-Yong (MIT CMP Team, ANAM Semiconductor, Inc.) ;
  • Lim, Jong-Heun (Electronic Materials 2/sup nd/ division, DongJin Semichem Co., Ltd.) ;
  • Yu, Chong-Hee (Electronics and Telecommunications Research Institute) ;
  • Kim, Nam-Hoon (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Chang, Eui-Goo (School of Electrical and Electronics Engineering, Chung-Ang University)
  • Published : 2003.04.01
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Abstract

The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H$_2$O$_2$) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H$_3$PO$_4$) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2$\^$nd/ step copper CMP slurry and hydrogen peroxide stability.

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References

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Cited by

  1. Chemical mechanical planarization for microelectronics applications vol.45, pp.3-6, 2004, https://doi.org/10.1016/j.mser.2004.06.002
  2. Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN as Barrier/Liner Layer vol.7, pp.11, 2018, https://doi.org/10.1149/2.0121811jss