• Plant Journal
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• v.7 no.2
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• pp.30-38
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• 2011

The purpose of this paper is to review the understanding of pollution causes in the excitation system and how to solve the problem. The cause of the problem was in-leakage of bearing lubricant oil through the gap between rotor and outer in the air deflector, which was triggered by a negative pressure with respect to the operation of a collector ring fan in the collector house. In order to prevent exciting current transmission equipment pollutant, the reduction of the negative gage pressure of the inside of collector house is required. The protection in-leakage of bearing lubricant oil through the gap between rotor and outer of the air deflector are necessary. The reduction of the inside diameter of air deflector and the expansion of inlet filter of collector house are inevitable.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.795-797
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• 2003

As defects may be found in the brush gear of the generator due to the quality of the collector ring and the operation environment. A research on the operation condition and defect factors of the collector ring and brush, in relation to the brush gears in generators operating within Korea has been carried out, as well as an analysis of factors that affect the collector rings.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.51-56
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• 1981

A new I2L process for a high performance I2L structure is proposed. The modifiedstructure consists of a heavily doped extrinsic base and lowly doped intrinsic base where the collector regions are self-alignment with the intrinsic base regions. The proposed process untilizes spin-on sources as the diffusion sources and the self-alignment of collectors is achieved by using the hardened spin-on source as a diffusion mask. Test devices including a 13-stage ring oscillator have been fabricated by the proposed process on n/n+ silicon wafers with 6.5$\mu$m epitaxial layer. The maximum upward current gain of npn transistors is 8 for a three collector I2L cell. The speed-power product and minimum propagation delay for a one collector structure are 3.5 pJ and 50 ns, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.415-419
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• 1999

Many bipolar logic circuit of conventional occurred problem of speed delay according to deep saturation state of vertical NPN Transistor. In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. The structure of Gate consists of the vertical NPN Transistor, substrate and Merged PNP Transistor. In the result, we fount that tarriers which are coming into intrinsic Base from Emitter and the portion of edge are relatively a lot, so those make Base currents a lot and Gain is low with a few of collector currents because of cutting the buried layer of collector of conventional junction area. Merged PNP Transistor's currents are low because Base width is wide and the difference of Emitter's density and Base's density is small. we get amplitude of logic voltage of 200mv, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26nS in AC characteristic output of Ring-Oscillator connected Gate.

• Proceedings of the KIEE Conference
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• 1998.07a
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• pp.107-109
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• 1998

This paper presents mechanical analysis of gas turbine generator (113MVA, $3{\phi}$, 2P, 0.9PF, F class, 3600rpm, 60Hz, 13.8kV, 4.72kA, Air-Cooling) field coil deformation. Rotor end coil deformation is only appeared on turbine end but collector end coil is normal. Expansion direction of end coil is tangential not axial. Deformation appears more severe at top turn. Retaining ling is expanded by centrifugal force of coil and itself. In case friction coefficient between coil top surface and retaining ring insulation inner surface is small, coil end length ${\ell}$ does not change. However, in case friction coefficient big condition, coil end is expanded ${\Delta}{\ell}$ due to start and stop. Deformation is assumed about 30mm by watching photograph inner surface of retaining ring is coated by Teflon at manufacturing condition. Usually Teflon coating insulation surface is small friction coefficient. It's value 0.08${\sim}$0.15. However it's value exceeds more than 0.297. Since top turn deformation appears. The distortion and subsequent failure have occurred because of the lack of a sufficient slip-plane between the top field coil conductors and the inside surface of the retaining ring insulation on the turbine end of the field-winding.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.821-829
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• 1991

In this paper, a BICMOS technology that has CMOS devices for digital application and bipolar devices for high voltage (80V) analog applications is presented. Basic concept to design BICMOS device is simple process technology without making too many performance trade-offs. The base line process is poly gate p-well CMOS process and three additional masking steps are added to improve bipolar characteristics. The key ingredients of bipolar integration are n+ buried layer process, up/down isolation process and p-well base process. The bipolar base region is formed simultaneously with the region of CMOS p-well area to reduce mask and heat cycle steps. As a result, hFE value of NPN bipolar transistor is 100-150(Ic=1mA). Collector resistance value is 138 ohm in case of bent type collector structure. Breakdown voltage of BVebo, BVcbo and BVceo are 21V, 115V and78V respectively. Threshold voltage is ${\pm}$1.0V for NMOS and PMOS transistor. Breakdown voltage of NMOS and PMOS transistor is obtained 22V and 19V respectively. 41 stage CMOS ring oscillator has 0.8ns delay time.

• Progress in Medical Physics
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• v.33 no.1
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• pp.1-9
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• 2022

Purpose: To evaluate the effective volume of the Korea Research Institute of Standards and Science free air chamber (KRISS FAC) L1 used for the primary standard device of the low-energy X-ray air kerma. Methods: The mechanical dimensions were measured using a 3-dimensional coordinate measuring machine (3-d CMM, Model UMM 500, Carl Zeiss). The diameter of the diaphragm was measured by a ring gauge calibrator (Model KRISS-DM1, KRISS). The elongation of the collector length due to electric field distortion was determined from the capacitance measurement of the KRISS FAC considering the result of the finite element method (FEM) analysis using the code QuickField v6.4. Results: The measured length of the collector was 15.8003±0.0014 mm with a 68% confidence level (k=1). The aperture diameter of the diaphragm was 10.0021±0.0002 mm (k=1). The mechanical measurement volume of the KRISS FAC L1 was 1.2415±0.0006 cm³ (k=1). The elongated length of the collector due to the electric field distortion was 0.170±0.021 mm. Considering the elongated length, the effective measurement volume of the KRISS FAC L1 was 1.2548±0.0019 cm³(k=1). Conclusions: The effective volume of the KRISS FAC L1 was determined from the mechanically measured value by adding the elongated volume due to the electric field distortion in the FAC. The effective volume will replace the existing mechanically determined volume in establishing and maintaining the primary standard of the low-energy X-ray.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1434-1436
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• 1995

We designed and fabricated a highly sensitive magnetotransistor which employes the emitter region as a Hall plate for inducing Hall voltage across the emitter. The Hall voltage modulates the emitter basic junction bias on both sides of the emitter so that a large collector current difference is resulted. The specially designed $p^+$ ring around the emitter enhances accumulation of drifted electrons in the emitter and thus the Hall voltage. A relative sensitivity of 240/tesla is measured by operating the device in the saturation mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.168-171
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• 2002

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1029-1033
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• 2004

In this paper, we propose a new Suppressed Sidewall Injection Magnetotransistor(SSIMT) architecture, which allows to overcome the restriction of the standard CMOS technology and achieve high linearity. The proposed SSIMT is designed based on the Hynix 0.6 um standard CMOS technology. The fabricated SSIMT has been experimentally verified. The SSIMT shows that the change of collector current is extremely linear as a function of the magnetic induction at $I_{B}$ =500$\mu$A, $V_{CE}$ =2V and VSE =5 V. The relative sensitivity is up to 120 %/T. The magnetic conversion offset is about 79 mT with 30.5 %/T relative sensitivity. The nonlinearity of the fabricated SSIMT is measured about 1.4 %.%.