A Study on the Sensitivity Increase of the Magnetotransistor with Combined Hall Effect and Emitter Injection Modulation Operated in the Saturation Region

홀 효과와 에미터 인젝션 모듈레이션이 결합된 자기트랜지스터의 포화영역에서의 민감도 증가 현상에 관한 연구

We designed and fabricated a highly sensitive magnetotransistor which employes the emitter region as a Hall plate for inducing Hall voltage across the emitter. The Hall voltage modulates the emitter basic junction bias on both sides of the emitter so that a large collector current difference is resulted. The specially designed $p^+$ ring around the emitter enhances accumulation of drifted electrons in the emitter and thus the Hall voltage. A relative sensitivity of 240/tesla is measured by operating the device in the saturation mode.