• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1023-1028
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• 2014

Protonated caffeine ($CH^+$) and glucosamine ($GH^+$) overlapped in an analysis with ion mobility spectrometryquadrupole mass spectrometry. Ethyl lactate vapor (L) at different concentrations from 0 to 22 mmol $m^{-3}$ was added as a buffer gas modifier to separate these signals. The drift times of $CH^+$ and $GH^+$ increased with L concentration. The drift time increase was associated to clustering equilibria of $CH^+$ and $GH^+$ with one molecule of L and the equilibrium of $GH^+$ was more displaced to the formation of $GLH^+$ than that of $GLH^+$. $GH^+$ clustered more to L than $CH^+$ because $GLH^+$ formed more stable hydrogen bonds (26.30 kcal/mol) than $GLH^+$ (24.66 kcal/mol) and the positive charge in $GH^+$ was more sterically accessible than in $CH^+$. The aim of this work was to use theoretical calculations to guide the selection of a buffer gas modifier for IMS separations of two compounds that overlap in the mobility spectra and predict this separation, simplifying that empirical process.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3665-3670
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• 2013

The R3V6 peptide includes a hydrophilic arginine stretch and a hydrophobic valine stretch. In previous studies, the R3V6 peptide was evaluated as a gene carrier and was found to have low cytotoxicity. However, the transfection efficiency of R3V6 was lower than that of poly-L-lysine (PLL) in N2A neuroblastoma cells. In this study, the transfection efficiency of R3V6 was improved in combination with high mobility group box 1A domain (HMGA). HMGA is originated from the nuclear protein and has many positively-charged amino acids. Therefore, HMGA binds to DNA via charge interaction. In addition, HMGA has a nuclear localization signal peptide and may increase the delivery efficiency of DNA into the nucleus. The ternary complex with HMGA, R3V6, and DNA was prepared and evaluated as a gene carrier. First, the HMGA/DNA complex was prepared with a negative surface charge. Then, R3V6 was added to the complex to coat the negative charges of the HMGA/DNA complex, forming the ternary complex of HMGA, R3V6, and DNA. A physical characterization study showed that the ternary complex was more stable than the PLL/DNA complex. The HMGA/R3V6/DNA complex had a higher transfection efficiency than the PLL/DNA, HMGA/DNA, or R3V6/DNA complexes in N2A cells. Furthermore, the HMGA/R3V6/DNA complex was not toxic to cells. Therefore, the HMGA/R3V6/DNA complex may be a useful gene delivery carrier.

• Microbiology and Biotechnology Letters
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• v.9 no.4
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• pp.185-190
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• 1981

1. $\alpha$-amylase from B. circulans F-2 was purified with specific activity 55.0 u/mg. protein (about 23 times of the original specific activity) and the yield of 25.5%, by means of corn starch absorption, salting out with ammonium sulfate (80% saturation), gel filtration on Bio-Gel P-100 and DE-32 column chromatography. 2 The purified enzyme showed two closely migrated protin bands on polyacrylamide disc gel electrophoresis, both of which have amylase activity judging from the activity staining of the gel. On SDS-polyacrylamide disc gel electrophoresis, however, the purified enzyme showed a single band suggesting that those two bands are the charge isomers of an amlyase having the slightly different charge. 3. Plot of log mobility of two bands versus polyacrylamide gel concentration according to Hedrick and Smith gave the parallel lines indicating them to be charge isomers. 4. To confirm the action pattern of two enzyme protein bands, each band was separated and was eluted from the gel and eluates were incubated with soluble starch. Oligosaccharide pattern produced by each eluate was examined by paper chromatography. The eluates of two bands showed the same action pattern. 5. The maltohexaose was the only hydrolysis product of soluble starch in the early stage of hydrolysis.

• Particle and aerosol research
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• v.19 no.2
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• pp.31-42
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• 2023

The charge and magnetic characteristics of LM (Low-metallic) and NAO (Non-asbestos-organic) brake wear particles were analyzed. The ratio of charged particles from total particles is about 86% of the LM pad and about 92% of the NAO pad. Number of charge per particle from the NAO pad is also higher than that of the LM pad. The ratio of magnetic particles from total particles increases with the particle size. The ratio of magnetic particles from the LM pad is about 15% for the particles with the size of 1 ㎛, and about 74% for ones with 5 ㎛. The ratio from the NAO pad is about 5% for the particles with the size from 0.5 ㎛ to 2 ㎛, and about 80% for the particles with 5 ㎛. Through the analysis of the components of the two pads with SEM-EDS (Scanning Electron Microscopy - Energy Dispersive X-ray Spectroscopy), it was found that the LM pad was occupied with more iron fraction than the NAO pad and that PM_2.5-10 was occupied with more iron fraction than PM_2.5. The particles smaller than 10 ㎛ (i.e. PM₁₀) from the LM pad contained about 83% of charged particles, about 43% of magnetic particles, and about 93% of charged or magnetic particles. PM₁₀ from the NAO pad contained about 88% of charged particles, about 15% of magnetic particles, and about 89% of charged or magnetic particles.

• Journal of Electrical Engineering and Technology
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• v.7 no.2
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• pp.236-239
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• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.86-92
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• 2020

We confirmed the effects on the device performances and the charge injection characteristics of organic field-effect transistor (OFET) by selectively differently controlling the surface energies on the contact region of the substrate where the source/drain electrodes are located and the channel region between the two electrodes. When the surface energies of the channel and contact regions were kept low and increased, respectively, the field-effect mobility of the OFET devices was 0.063 ㎠/V·s, the contact resistance was 132.2 kΩ·cm, and the subthreshold swing was 0.6 V/dec. They are the results of twice and 30 times improvements compared to the pristine FET device, respectively. As the results of analyzing the interfacial trap density according to the channel length, a major reason of the improved device performances could be anticipated that the pi-pi overlapping direction of polymer semiconductor molecules and the charge injection pathway from electrode is coincided by selective surface treatment in the contact region, which finally induces the decreases of the charge trap density in the polymer semiconducting film. The selective surface treatment method for the contact region between the electrode and the polymer semiconductor used in this study has the potential to maximize the electrical performances of organic electronics by being utilized with various existing processes to lower the interface resistance.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.31-37
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• 1998

A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.