Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

New hole mobility model including hole and lattice

정공과 격자의 온도를 고려한 새로운 정공 이동도 모델

  • 김중식 (서울대학교 전기공학부 및 반도체 공동연구소) ;
  • 김진양 (서울대학교 전기공학부 및 반도체 공동연구소) ;
  • 김찬호 (숭실대학교 전자공학과) ;
  • 신형순 (이화여자대학교 전자공학과) ;
  • 박영준 (서울대학교 전기공학부 및 반도체 공동연구소) ;
  • 민홍식 (서울대학교 전기공학부 및 반도체 공동연구소)
  • Published : 1998.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.

Keywords