• 한국방송∙미디어공학회:학술대회논문집
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• 한국방송공학회 1996년도 학술대회
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• pp.39-43
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• 1996

This paper presents the designing scheme of the duplexer for ground station using rectangular waveguide. The duplexer consists of 2-channel bandpass filters having asymmetrical inductive window and inductive post obstacles, coupled with H-plane Apertured-coupled junction, and operating in the frequency ranges of 14.5∼14.8GHz and 11.7∼12.0 GHz which are the DBS up/downlink for the domestic Ku-band ground station.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.533-536
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• 1998

The electrical characteristics of NMOSFETs with asymmetrical source/drain regions have been expermentally investigated using test devices fabricated by $0.35\mu\textrm{m}$ CMOS technology. The performance degradation for asymmetric transistor and its causes are analyzed. The parasitic resistances, such as series resistance of active regions and silicide junction contact resistance, are distributed in parallel along the channel. Depending on source/drain geometry, the array of those resistances is changed, that results the various electrical properties.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 I
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• pp.222-225
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• 2003

본 논문에서는 six port 를 사용한 실시간 디지털 직접 변환 수신기를 소개하고 실제 six port 구조를 이용해 구현된 직접 변환 수신기의 성능을 분석한다. 제안한 알고리즘은 송신단과 수신단의 위상 오류를 보정하고 랜덤한 채널 잡음 환경에서도 성능의 저하가 크지 않다. 다음으로는 위상 오류 추정 방법을 사용하여 수신기에서의 성능 향상을 컴퓨터 시뮬레이션을 통해서 살펴보았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1370-1371
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latchup problem during normal operation. However, a modified NEDSCR device with proper junction / channel engineering demonstrates itself with both the excellent ESD protection performance and the high latchup immunity.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1372-1373
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current- voltage characteristics.

• 물과 미래
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• 제25권1호
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• pp.101-110
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• 1992

유역내 공간적 및 시간적 분포특성을 가진 이동강우를 해석하기 위하여 분포형 모델을 개발하였으며 이 유역모델은 지표면 흐름과 하천망 흐름으로 나누어 유출을 해석하였다. 지표면의 흐름은 2차원의 연속방정식과 운동량 방정식을 이요하였는데 kinematic 이론을 도입하여 운동량 방정식을 간략화 하였으며 하천망 흐름은 하천망을 일체로 하여 1차원의 연속방정식과 운동량방정식들을 이용하였다. 기본방정식들의 수치해석법으로 지표면의 흐름은 유한요소법을 이용하였으며 하천망에 대한 해석은 음해법의 유한차분법을 이용하였다. 모델은 특히 이동강우에 있어서 중요한 특색인 공간적 및 시간적 특성을 효과적으로 해석할 수 있도록 개발되었다. 또한 모델은 구성된 행렬의 특징을 이용하였는데, 지표면 유출모델은 Gauss 소거법을 이용하여 그해를 구하였으며 하천망 해석은 double sweep 방법을 적용하기 위한 여러 종류의 순환계수방정식을 제안하였고 이를 이용하여 그 해를 구하였다.

• Food Science and Biotechnology
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• 제14권4호
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• pp.554-557
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• 2005

As a device for taste sensation, an 8-channel taste evaluation system was prepared and applied for discriminant analysis of marketed liquor. The biomimetic polymer membranes for the system were prepared through a casting procedure by employing polyvinyl chloride, bis (2-ethylhexyl)sebacate as plasticizer and electroactive materials such as valinomycin in the ratio of 33:66:1, and were separately attached over the sensitive area of ion-selective electrodes to construct the corresponding taste sensor array. The sensor array in conjunction with a double junction reference electrode was connected to a high-input impedance amplifier and the amplified sensor signals were interfaced to a personal computer via an A/D converter. When the signal data from the sensor array for 3 groups of marketed liquor like Maesilju, Soju and beer were analyzed by principal component analysis after normalization, it was observed that the 1st, 2nd and 3rd principal component were responsible for most of the total data variance, and the analyzed liquor samples were discriminated well in 2 dimensional principal component planes composed of the 1st-2nd and the 1st-3rd principal component.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2444-2448
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• 2007

The multi channel of DDI which is the core part of the LCD-TV has been propelled. When multi channel in DDI is introduced, it brings a thermal problem because of the increased power. To solve the thermal problem of the DDI it needs to be investigated each at the package level and module level. It is important to extract the junction temperature(Tj) of DDI clearly from the system level. The objective of this research is to construct a compact model. The compact model is to reduce LCD module including DDI. When the compact model is used, it will be able to easily handle the boundary condition and accurately predict the temperature. Consequently, the temperature of DDI can be calculated easily at the system level. Through this research,we also proposed the cooling plan of DDI for a protection of overheating. The cooling plan was utilized in DDI design.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.270-277
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• 2000

A new Lateral Trench-MOS Bipolar-Mode Field-Effect Transistor(LTMBMFET) is proposed and verified by MEDICI simulation. By using a trench MOS structure, the proposed device can enhance the current gain without sacrificing other device characteristics such as the breakdown voltage. The channel region of the proposed device is formed between the trench MOS structure. So the effect of the substrate voltage is negligible when compared with the conventional device which has a channel region between the gate junction and the buried oxide layer.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.143-145
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• 2016

In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.