[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2016.17.3.143

Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes

Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)

Publication Information

Transactions on Electrical and Electronic Materials / v.17, no.3, 2016 , pp. 143-145 More about this Journal

Abstract

In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.

Keywords

Amorphous oxide semiconductor; Source and drain electrode; a-IGZO; Transparent conductive oxide;

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Times Cited By KSCI : 1 (Citation Analysis)

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