Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Characteristics of N-Type Extended Drain Silicon Controlled Rectifier ESD Protection Device

NED-SCR 정전기보호소자의 특성

  • Seo, Y.J. (Electrical Engineering Department of Daebul University) ;
  • Kim, K.H. (Magnachip Semiconductor) ;
  • Lee, W.S. (Chosun University)
  • Published : 2006.07.12
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Abstract

An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latchup problem during normal operation. However, a modified NEDSCR device with proper junction / channel engineering demonstrates itself with both the excellent ESD protection performance and the high latchup immunity.

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