• Title/Summary/Keyword: channel effect

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The Factors Affecting Preference and Image of YouTube Beauty Channels (유튜브 뷰티 채널의 선호도와 이미지에 미치는 영향 요인)

  • Kong, Ling Yu;Kim, Injai
    • The Journal of Information Systems
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    • v.28 no.3
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    • pp.25-38
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    • 2019
  • Purpose This study aims to empirically analyze which factors affect image and preference of YouTube beauty channels. Some practical and academic implications are presented through empirical research. Design/methodology/approach For this purpose, the six affecting factors were suggested on the basis of previous studies. We proposed image quality, user attitude, empirical value, economics, and awareness as independent variables and channel image and channel preference as dependent variables in order to investigate the causal relationships among the research variables. We surveyed 311 users who had experience in using YouTube Beauty channel and analyzed the data by using a statistical package. Findings This study showed that the channel image has a partial mediating effect between the affecting variables and the channel preference. The results provided some insights and information to increase the number of subscribers and site views. Several suggestions were carefully made.

The Electrical Properties of Single-silicon TFT Structure with Symmetric Dual-Gate for kink effect suppression

  • Lee, Deok-Jin;Kang, Ey-Goo
    • Journal of the Korea Computer Industry Society
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    • v.6 no.5
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    • pp.783-790
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    • 2005
  • In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

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Analysis of the Effect of Coherence Bandwidth on Leakage Suppression Methods for OFDM Channel Estimation

  • Zhao, Junhui;Rong, Ran;Oh, Chang-Heon;Seo, Jeongwook
    • Journal of information and communication convergence engineering
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    • v.12 no.4
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    • pp.221-227
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    • 2014
  • In this paper, we analyze the effect of the coherence bandwidth of wireless channels on leakage suppression methods for discrete Fourier transform (DFT)-based channel estimation in orthogonal frequency division multiplexing (OFDM) systems. Virtual carriers in an OFDM symbol cause orthogonality loss in DFT-based channel estimation, which is referred to as the leakage problem. In order to solve the leakage problem, optimal and suboptimal methods have already been proposed. However, according to our analysis, the performance of these methods highly depends on the coherence bandwidth of wireless channels. If some of the estimated channel frequency responses are placed outside the coherence bandwidth, a channel estimation error occurs and the entire performance worsens in spite of a high signal-to-noise ratio.

Dual Action of d-Tubocurarine on Large-Conductance $Ca^{2+}-activated$ $K^+$ Channels from Rat Brain Reconstituted into Planar Lipid Bilayer

  • Chung, Sung-Kwon;Shin, Jung-Hoon
    • The Korean Journal of Physiology and Pharmacology
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    • v.2 no.5
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    • pp.549-553
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    • 1998
  • Using the planar lipid bilayer method, we investigated the effect of d-tubocurarine (dTC) on the extracellular side of large-conductance $Ca^{2+}-activated\;K^+$ channel from rat brain. When the initial open probability (Po) of the channel was relatively high, dTC decreased channel activity in a concentration dependent manner. In contrast, when the initial Po was lower, sub-micro molar dTC increased channel activity by destabilizing the closed states of the channel. Further addition of dTC up to micro molar range decreased channel activity. This dual effect of dTC implicates that there exist at least two different binding sites for dTC.

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Delay Analysis for Dynamic Multiplexing Scheme in Connection-oriented Wireless Cellular Networks

  • Park, Cheon-Won
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.74-77
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    • 1998
  • We consider connection-oriented wireless cellular networks. These networks employ dedicated radio channels for the transmission of signaling information. A forward signaling channel is a common signaling channel assigned to carry the multiplexed stream of paging and channel allocation(virtual circuit allocation) packets from a base station to mobile stations. The delay levels experienced by paging and channel allocation packets have serious effect on the utilization level of the limited radio channel capacity. While a slotted mode operation is used to reduce the power consumption level at mobile stations, it may induce an increase in packet delay levels. In this paper, we thus consider a multiplexing scheme for paging and channel allocation packets under which slots are dynamically allocated for the paging packet transmission. For this dynamic scheme, we develop an analytical method for deriving the delay characteristics exhibited by paging and channel allocation packets, and investigate the effect of network parameters on the delay level by using this method.

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A study on the threshold Voltage Model for Short-channel EIGFET (Short-Channel EIGFET의 Threshold 전압 모델에 관한 연구)

  • Park, Gwang-Min;Kim, Hong-Bae;Gwak, Gye-Dal
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.4
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    • pp.1-7
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    • 1985
  • In this paper, a more improved threshold voltage model dependent on drain voltage and substrate bias for short - channel enhancement - mode IGFET is presented. Especially, compared with the several recently published models, the error is sufficiently reduced with the precise analysis on the correction factor for short-channel effect and the calculated values using this model are also agreed well with the experimental data about 1$\mu$m - channel length device.

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The Study about Cooling Effect of a Heated module in a Horizontal Channel with a Variation of Channel Height (수평채널 밑면에 부착된 단일 발열모듈에서 채널높이의 변화에 따른 냉각특성 연구)

  • 이진호;유갑종;장준영;김병하
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.13 no.5
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    • pp.348-355
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    • 2001
  • The coupled conduction and convection heat transfer from a protruding heated module in a horizontal channel with a variation of channel height is experimentally investigated. The input power to the module is 3, 7W and thermal resistance of module support is 0.06 , 1.03 and 158K/W. the Reynolds number ranged from 350 to 4500 corresponding to the inlet velocity(0.4~1.3 m/s) and channel height(11~35 mm). The results were obtained that the decrease of thermal resistance of module support reduces the module temperature by redistributing the heat flux and the overall thermal resistance of the module. In the study the effect of channel height is very significant in the adiabatic condition, but negligible in the conjugate condition. Finally, correlations for Nusselt number and $Q_B$/Q with a variation of Reynolds number were developed respectively.

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Influence of Channel Length on the Performance of Poly-Si Thin-Film Transistors (다결정 실리콘 박막 트랜지스터의 성능에 대한 채널 길이의 영향)

  • 이정석;장창덕;백도현;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.450-453
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    • 1999
  • In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

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Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET (Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화)

  • Sub, Won-Chang;Lee, Myung-Soo;Ryu, Se-Hwan;Han, Deuk-Young;Ahn, Hyung-Keun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.9
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    • pp.793-799
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    • 2006
  • In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.

Considering on the Ground Reflection Effect on the Electromagnetic Fields due to Lightning Channel

  • Izadi, Mahdi;Ab Kadir, Mohd Zainal Abidin;Hajikhani, Maryam
    • Journal of Electrical Engineering and Technology
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    • v.8 no.4
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    • pp.824-831
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    • 2013
  • Lightning electromagnetic fields are important issues for the evaluation of lightning induced overvoltage on power lines and for setting the appropriate protection level for power networks. Such electromagnetic fields are strongly dependent on lightning return stroke currents at different heights along the lightning channel. On the other hand, the ground reflection factor due to the difference between the return stroke channel impedance and the equivalent ground impedance at channel base can have an effect on the shape of the return stroke currents by entering additional reflected currents into the channel. In this paper, the effect of the ground reflection factor on the return stroke currents at different heights along a channel and the electromagnetic fields associated with the lightning channel at close distances are considered. Moreover, the behavior of the electromagnetic fields versus the reflection factor changes and the radial distance changes are considered and the results are discussed accordingly. The results illustrate that the reflection factor has a direct relationship with the values of the electromagnetic fields while this is usually ignored in earlier studies.