• 한국진공학회지
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• 제22권6호
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• pp.335-340
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• 2013

본 논문은 InP 식각정지층을 갖는 MHEMT 소자의 항복전압을 증가시키기 위한 시뮬레이션 설계 논문이다. MHEMT 소자의 게이트 리세스 구조 및 채널 구조를 변경하여 시뮬레이션을 수행하였고 비교 분석하였다. MHEMT 소자의 드레인 측만을 완전히 제거한 비대칭 게이트 리세스 구조인 경우 $I_{dss}$ 전류가 90 mA에서 60 mA로 줄어들지만 항복 전압은 2 V에서 4 V로 증가함을 확인하였다. 이는 $Si_3N_4$ 보호층과 InAlAs 장벽층 사이의 계면에서 형성되는 전자-포획 음의 고정전하로 인해 채널층에서의 전자 공핍이 심화되어 나타나는 현상으로 이는 채널층의 전류를 감소시켜 충돌이온화를 적게 형성시켜 항복전압을 증가시킨다. 또한, 동일한 구조의 비대칭 게이트 리세스 구조에서 채널층을 InGaAs/InP 복합 채널로 바꾸어 설계한 구조에서는 항복전압이 5 V로 증가하였다. 이는 높은 드레인 전압에서 InP 층의 적은 충돌이온화와 이동도로 인해 전류가 더 감소했기 때문이다.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2009년도 학술발표회 초록집
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• pp.752-757
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• 2009

In the last decade, many methods such as greet chamber, reservoir, or debris barrier, have been utilized to manage and prevent muddy water problem. The Vegetative Filter Strip (VFS) has been thought to be one of the most effective methods to trap sediment effectively. The VFS are usually installed at the edge of agricultural areas adjacent to stream or drainage ditches, and it has been shown that the VFS effectively removes pollutants transported with upland runoff. But, if the VFS is installed without any scientific analysis of rainfall-runoff characteristics, soil erosion, and sediment analysis, it may not reduce the sediment as much as expected. Although Soil and Water Assessment Tool (SWAT) model has been used worldwide for many hydrologic and Non-Point Source Pollution (NPSP) analysis at a watershed scale. but it has many limitations in simulating the VFS. Because it considers only 'filter strip width' when the model estimates sediment trapping efficiency, and does not consider the routing of sediment with overland flow option which is expected to maximize the sediment trapping efficiency from upper agricultural subbasin to lower spatially-explicit filter strip. Therefore, the SWAT overland flow option between landuse-subbasins with sediment routing capability was enhanced with modifications in SWAT watershed configuration and SWAT engine. The enhanced SWAT can simulate the sediment trapping efficiency of the VFS in the similar way as the desktop VFSMOD-w system does. Also it now can simulate the effects of overland flow from upper subbasin to reflect the increased runoff volume at the receiving subbasin, which is what is occurring at the field if no diversion channel is installed. In this study, the enhanced SWAT model was applied to small watershed located at Jaun-ri in South Korea to simulate diversion channel and spatially-explicit VFS. It was found that approximately sediment can be reduced by 31%, 65%, 68%, with diversion channel, the VFS, and the VFS with diversion channel, respectively.

• 한국방재학회 논문집
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• 제10권6호
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• pp.17-25
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• 2010

본 연구는 U-채널 세그멘탈 콘크리트 교량의 차량 충돌 안전성에 대한 연구를 수행하였다. U-채널 세그멘탈 콘크리트 교량은 추가 고정하중을 감소시키고, 측보가 방호벽 역할을 동시에 수행하는 교량이라는 장점을 가지고 있다. 그러나 측보의 파괴는 전체 교량의 붕괴로 이어질 수 있는 위험 요소를 가지고 있다. 따라서, U-채널 세그멘탈 콘크리트 교량 측보의 차량 충돌에 따른 거동분석 및 특성파악이 필요하다고 판단된다. 본 논문에서는 AASHTO LRFD 설계기준 (2007)의 정적 및 동적 차량 충돌해석 기준을 적용하여 U-채널 세그멘탈 콘크리트 교량의 충돌해석을 수행하였다. 정적차량충돌해석의 경우에는 AASHTO LRFD 설계기준 (2007)에서 제시하고 있는 등가정적하중 재하하여 해석을 수행하고, 동적차량충돌의 경우에는 AASHTO LRFD 설계기준 (2007)의 방호벽 충돌실험기준에 근거한 실제 차량을 모델링하여 충돌해석을 통한 안전성 검토를 수행하였다. 검토결과, AASHTO LRFD 설계기준 (2007)을 만족하는 정적 및 동적 충돌하중에 대해 U-채널 교량시스템은 안전성을 확보하고 있는 것으로 판단된다.

• 융합정보논문지
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• 제11권7호
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• pp.104-110
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• 2021

본 핀 채널 전계 효과 트랜지스터에서 낮은 소스/드레인 직렬 저항을 위한 새로운 선택적 산화 방식을 제안하였다. 이 방법을 이용하면, gate-all-around 구조와 점진적으로 증가되는 형태의 소스/드레인 확장영역을 갖는 핀 채널 MOSFET를 얻을 수 있다. 제안된 트랜지스터는 비교 소자에 비해 70% 이상의 소스/드레인 직렬 저항의 감소를 얻을 수 있다. 또한, 제안된 소자는 단채널 효과를 억제하면서도 높은 구동 전류와 전달컨덕턴스 특징을 보인다. 제작된 소자의 포화전류, 최대 선형 전달컨덕턴스, 최대 포화 전달컨덕턴스, subthreshold swing, 및 DIBL은 각각 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, 62 mV/V의 값을 갖는다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.153-162
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• 2014

We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.25-25
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• 2000

In this talk we discuss the dynamics of hydrogen on the Si(100)-2xl surface. At room temperature the sticking coefficient for molecular hydrogen on this surface is less than 10sup-12. However, hydrogen molecules desorbing from the surface do not have an excess of energy, suggesting at best a small barrier on the exit channel. These observations have led to speculation about the validity of detailed balance in this system. Here we show that this discrepancy can be explained by considering both the surface-molecule co-ordinate and that associated with the Si-Si dimer bond tiltangle. By preparing the surface dimers with a specific tiltangle we demonstrate that the barrier to adsorption is a function of this angle and that the sticking coefficient dramatically increase for certain angles. The adsorption-desopption dynamics can then be described in terms of a common potential energy hypersurface involving both of these co-ordinates. The implications of these observations are also discussed. The dynamics of adsorbed hydrogen atoms on the Si(100) surface is also described. Paired dangling bonds produced following recombinative hydrogen desorption are mobile at elevated temperatures. Pairs of dangling bonds are observed to dissociate, diffuse, and ultimately recombine. At sufficiently elevated temperatures dangling bond exchange reactions are observed. These data are analyzed in terms of an attractive zone and an effective binding interaction between dangling bonds. Insights that this provides into the nature of surface defects and the localized chemistry that occurs on this surface, are also discussed.

• 센서학회지
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• 제20권3호
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• The Korean Journal of Physiology and Pharmacology
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• 제2권4호
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• pp.529-539
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• 1998

The effects of membrane surface charge originated from lipid head groups on ion channels were tested by analyzing the activity of single large conductance $Ca^{2+}-activated\;K^+$ (maxi K) channel from rat skeletal muscle. The conductances and open-state probability ($P_o$) of single maxi K channels were compared in three types of planar lipid bilayers formed from a neutral phosphatidylethanolamine (PE) or two negatively-charged phospholipids, phosphatidylserine (PS) and phosphatidylinositol (PI). Under symmetrical KCl concentrations $(3{\sim}1,000\;mM)$, single channel conductances of maxi K channels in charged membranes were $1.1{\sim}1.7$ times larger than those in PE membranes, and the differences were more pronounced at the lower ionic strength. The average slope conductances at 100 mM KCl were $251{\pm}9.9$, $360{\pm}8.7$ and $356{\pm}12.4$ $(mean{\pm}SEM)$ pS in PE, PS and PI membranes respectively. The potentials at which $P_o$ was 1/2, appeared to have shifted left by 40 mV along voltage axis in the membranes formed with PS or PI. Such shift was consistently seen at pCa 5, 4.5, 4 and 3.5. Estimation of the effect of surface charge from these data indicated that maxi K channels sensed the surface potentials at a distance of $8{\sim}9\;{\AA}$ from the membrane surface. In addition, similar insulation distance ($7{\sim}9\;{\AA}$) of channel mouth from the bilayer surface charge was predicted by a 3-barrier-2-site model of energy profile for the permeation of $K^+$ ions. In conclusion, despite the differences in structure and fluidity of phospholipids in bilayers, the activities of maxi K channels in two charged membranes composed of PS or PI were strikingly similar and larger than those in bilayers of PE. These results suggest that the enhancement of conductance and $P_o$ of maxi channels is mostly due to negative charges in the phospholipid head groups.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.