• Journal of the Korean Vacuum Society
• /
• v.22 no.6
• /
• pp.335-340
• /
• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• Proceedings of the Korea Water Resources Association Conference
• /
• 2009.05a
• /
• pp.752-757
• /
• 2009

In the last decade, many methods such as greet chamber, reservoir, or debris barrier, have been utilized to manage and prevent muddy water problem. The Vegetative Filter Strip (VFS) has been thought to be one of the most effective methods to trap sediment effectively. The VFS are usually installed at the edge of agricultural areas adjacent to stream or drainage ditches, and it has been shown that the VFS effectively removes pollutants transported with upland runoff. But, if the VFS is installed without any scientific analysis of rainfall-runoff characteristics, soil erosion, and sediment analysis, it may not reduce the sediment as much as expected. Although Soil and Water Assessment Tool (SWAT) model has been used worldwide for many hydrologic and Non-Point Source Pollution (NPSP) analysis at a watershed scale. but it has many limitations in simulating the VFS. Because it considers only 'filter strip width' when the model estimates sediment trapping efficiency, and does not consider the routing of sediment with overland flow option which is expected to maximize the sediment trapping efficiency from upper agricultural subbasin to lower spatially-explicit filter strip. Therefore, the SWAT overland flow option between landuse-subbasins with sediment routing capability was enhanced with modifications in SWAT watershed configuration and SWAT engine. The enhanced SWAT can simulate the sediment trapping efficiency of the VFS in the similar way as the desktop VFSMOD-w system does. Also it now can simulate the effects of overland flow from upper subbasin to reflect the increased runoff volume at the receiving subbasin, which is what is occurring at the field if no diversion channel is installed. In this study, the enhanced SWAT model was applied to small watershed located at Jaun-ri in South Korea to simulate diversion channel and spatially-explicit VFS. It was found that approximately sediment can be reduced by 31%, 65%, 68%, with diversion channel, the VFS, and the VFS with diversion channel, respectively.

• Journal of the Korean Society of Hazard Mitigation
• /
• v.10 no.6
• /
• pp.17-25
• /
• 2010

This paper studied on stability of the U-channel segmental concrete bridge under vehicle-impact loads. The U-channel bridge has advantages in that it reduces an additional dead load and the edge beams role as a barrier. But it has a dangerous factor which collapses the bridge structure when the edge beams are ruptured. Therefore, it is necessary to verify behaviors of the bridge system under vehicle-impact loads. Static and dynamic vehicle impact simulations were carried out on the basis of AASHTO LRFD design specifications. In case of the static analysis, equivalent static loads specified in the AASHTO codes are loaded on the edge beams and in case of the dynamic analysis, FEM vehicle models are modeled by applying the dynamic test specifications of AASHTO codes. As a result, it is shown that U-channel bridge system has sufficient safety against static and dynamic impact loads specified in the AASHTO LRFD design specifications.

• Journal of Convergence for Information Technology
• /
• v.11 no.7
• /
• pp.104-110
• /
• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.2
• /
• pp.153-162
• /
• 2014

We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.478-483
• /
• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.25-25
• /
• 2000

In this talk we discuss the dynamics of hydrogen on the Si(100)-2xl surface. At room temperature the sticking coefficient for molecular hydrogen on this surface is less than 10sup-12. However, hydrogen molecules desorbing from the surface do not have an excess of energy, suggesting at best a small barrier on the exit channel. These observations have led to speculation about the validity of detailed balance in this system. Here we show that this discrepancy can be explained by considering both the surface-molecule co-ordinate and that associated with the Si-Si dimer bond tiltangle. By preparing the surface dimers with a specific tiltangle we demonstrate that the barrier to adsorption is a function of this angle and that the sticking coefficient dramatically increase for certain angles. The adsorption-desopption dynamics can then be described in terms of a common potential energy hypersurface involving both of these co-ordinates. The implications of these observations are also discussed. The dynamics of adsorbed hydrogen atoms on the Si(100) surface is also described. Paired dangling bonds produced following recombinative hydrogen desorption are mobile at elevated temperatures. Pairs of dangling bonds are observed to dissociate, diffuse, and ultimately recombine. At sufficiently elevated temperatures dangling bond exchange reactions are observed. These data are analyzed in terms of an attractive zone and an effective binding interaction between dangling bonds. Insights that this provides into the nature of surface defects and the localized chemistry that occurs on this surface, are also discussed.

• Journal of Sensor Science and Technology
• /
• v.20 no.3
• /
• pp.156-161
• /
• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• The Korean Journal of Physiology and Pharmacology
• /
• v.2 no.4
• /
• pp.529-539
• /
• 1998

The effects of membrane surface charge originated from lipid head groups on ion channels were tested by analyzing the activity of single large conductance $Ca^{2+}-activated\;K^+$ (maxi K) channel from rat skeletal muscle. The conductances and open-state probability ($P_o$) of single maxi K channels were compared in three types of planar lipid bilayers formed from a neutral phosphatidylethanolamine (PE) or two negatively-charged phospholipids, phosphatidylserine (PS) and phosphatidylinositol (PI). Under symmetrical KCl concentrations $(3{\sim}1,000\;mM)$, single channel conductances of maxi K channels in charged membranes were $1.1{\sim}1.7$ times larger than those in PE membranes, and the differences were more pronounced at the lower ionic strength. The average slope conductances at 100 mM KCl were $251{\pm}9.9$, $360{\pm}8.7$ and $356{\pm}12.4$ $(mean{\pm}SEM)$ pS in PE, PS and PI membranes respectively. The potentials at which $P_o$ was 1/2, appeared to have shifted left by 40 mV along voltage axis in the membranes formed with PS or PI. Such shift was consistently seen at pCa 5, 4.5, 4 and 3.5. Estimation of the effect of surface charge from these data indicated that maxi K channels sensed the surface potentials at a distance of $8{\sim}9\;{\AA}$ from the membrane surface. In addition, similar insulation distance ($7{\sim}9\;{\AA}$) of channel mouth from the bilayer surface charge was predicted by a 3-barrier-2-site model of energy profile for the permeation of $K^+$ ions. In conclusion, despite the differences in structure and fluidity of phospholipids in bilayers, the activities of maxi K channels in two charged membranes composed of PS or PI were strikingly similar and larger than those in bilayers of PE. These results suggest that the enhancement of conductance and $P_o$ of maxi channels is mostly due to negative charges in the phospholipid head groups.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.399-399
• /
• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.