• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.5-12
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• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Korean Journal of Veterinary Research
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• v.32 no.4
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• pp.543-553
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• 1992

Properties of unitary ATP-sensitive $K^+$ channels were studied using planar lipid bilayer technique. Vesicles were prepared from bullfrog (Rana catesbeiana) skeletal muscle. ATP-sensitive $K^+$ (K (ATP)) channels were identified by their unitary conductance and sensitivity to ATP. In the symmetrical solution containing 200mM KCI, 10mM Hepes, 1mM EGTA and pH 7.2, single K (ATP) channels showed a linear current-voltage relations with slight inward rectification. Slope conductance at reversal potential was $60.1{\pm}0.43$ pS(n=3)). Micromolar ATP reversibly inhibited the channel activity when applied to the cytoplasmic side. In the range of -50~＋50 mV, the channel activity was not voltage-dependent, but the channel gating within a burst was more frequent at negative voltage range. Varying the concentrations of external/internal KCl(mM) to 40/200, 200/200, 200/100 and 200/40 shifted reversal potentials to $-30.8{\pm}2.9$(n=3), $-1.1{\pm}2.7$(n=3), 10.5 and 30.6(mV), respecrivety. These reversal potentials were close to the expected values by the Nernst equation, indicating nearly ideal selectivity for $K^+$ over $Cl^-$. Under bi-ionic conditions of 200mM external test ions and 200mM internal $K^+$, the reversal potentials for each test ion/K pair were measured. The measured reversal potentials were used for the calculation of the releative permeability of alkali cations to $K^+$ ions using the Goldman-Hodgkin-Katz equation. The permeability sequence of 5 cations relative to $K^+$ was $K^+$(1), $Rb^+$(0.49), $Cs^+$(0.27), $Na^+$(0.027) and $Li^+$(0.021). This sequence was recognized as Eisenman's selectivity sequence IV. In addition, modelling the permeation of $K^+$ ion through ATP-sensitive $K^+$ channel revealed that a 3-barrier 2-site multiple occupancy model can reasonably predict the observed current-voltage relations.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.267-270
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• 2002

Photodissociations of o-, m-, and p-iodotoluene radical cations were investigated by using Fourier-transform ion cyclotron resonance (FT-ICR) spectrometry. Iodotoluene radical cations were prepared in an ICR cell by a photoionization charge-transfer method. The time-resolved one-photon dissociation spectra were obtained at 532 nm and the identities of $C_7H_7^+$ products were determined by examining their bimolecular reactivities toward toluene-$d_8$. The two-photon dissociation spectra were also recorded in the wavelength range 615-670 nm. The laser power dependence, the temporal variation, and the identities of $C_7H_7^+$ were examined at 640 nm. The mechanism of unimolecular dissociation of iodotoluene radical cations is elucidated: the lowest barrier rearrangement channel leads exclusively to the formation of the benzyl cation, whereas the direct C-I cleavage channel yields the tolyl cations that rearrange to both benzyl and tropylium cations with dissimilar branching ratios among o-, m-, and p-isomers. With a two-photon energy of 3.87 eV at 640 nm, the direct C-I cleavage channel results in the product branching ratio, [tropylium cation]/[benzyl cation], in descending order, 0.16 for meta >0.09 for ortho >0.05 for para.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.23-29
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• 1989

A physical model that characterizes the field effect of the polycrystalline thin film transistor(TFT) is developed. The model discribes grains as discrete single crystal transistors and grain boundaries as insulated layers having the potential barrier, Thus TFT is considered as serial connection of single crystal transistors and insulators. In the model, the currents in the grain and the grain boundary is calculated using gradual channel approximation and tunneling theory, respetively. By comparing computed I-V characteristics with measured I-V characteristics of CdSe TFT's, potential and electric field distributions in the channel are observed and the validity of the conduction model proposed in this paper is confirmed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2324-2332
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• 2017

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.202-210
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• 2001

Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/AlOx/CoFe/NiFe/Al with in-situ naturally oxidized Al barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10$^{-9}$ Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R$_{j}$ A) are 16-17% and 50-60 $\Omega$${\mu}{\textrm}{m}$$^2$, respectively. The values of TMR and (R$_{j}$ A) with field annealing were slightly increased. The TMR and (R$_{j}$ A) dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.