• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.312-318
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• 2016

This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the $0.25{\mu}m$ GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

• ETRI Journal
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• v.36 no.6
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• pp.924-930
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• 2014

This paper presents a $0.13{\mu}m$ CMOS 3-level envelope delta-sigma modulation (EDSM) RF signal generator, which synthesizes a 2.6 GHz-centered fully symmetrical 3-level EDSM signal for high-efficiency power amplifier architectures. It consists of an I-Q phase modulator, a Class B wideband buffer, an up-conversion mixer, a D2S, and a Class AB wideband drive amplifier. To preserve fast phase transition in the 3-state envelope level, the wideband buffer has an RLC load and the driver amplifier uses a second-order BPF as its load to provide enough bandwidth. To achieve an accurate 3-state envelope level in the up-mixer output, the LO bias level is optimized. The I-Q phase modulator adopts a modified quadrature passive mixer topology and mitigates the I-Q crosstalk problem using a 50% duty cycle in LO clocks. The fabricated chip provides an average output power of -1.5 dBm and an error vector magnitude (EVM) of 3.89% for 3GPP LTE 64 QAM input signals with a channel bandwidth of 10/20 MHz, as well as consuming 60 mW for both channels from a 1.2 V/2.5 V supply voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.807-813
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• 2008

The gate-biases of the Doherty power amplifier are controlled to improve the linearity performance. The linearity improvement mechanism of the Doherty amplifier is the harmonic cancellation of the carrier and peaking amplifier at the output power combining point. However, it is difficult to cancel the harmonic power for the broader power range because the condition for cancelling is varied by power. For the linearity improvement, we have explored the linearity characteristic of the Doherty amplifier according to the input power and gate biases of the carrier and peaking amplifier. To extend the region of harmonic power cancellation, we have injected the proper gate bias to the carrier and peaking amplifier according to the input power levels. To validate the linearity improvement, the Doherty amplifier is designed using Eudyna 10-W PEP GaN HEMT EGN010MKs at 2.345 GHz and optimized to achieve a high linearity and efficiency at an average output power of 33 dBm, backed off about 10 dB from the $P_{1dB}$. In the experiments, the envelope tracking Doherty amplifier delivers a significantly improved adjacent channel leakage ratio performance of -37.4 dBc, which is an enhancement of about 2.8 dB, maintaining the high PAE of about 26 % for the WCDMA 1-FA signal at an average output power of 33 dBm. For the 802.16-2004 signal, the amplifier is also improved by about 2 dB, -35 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.681-689
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• 2010

We will demonstrate a novel topology for the feedforward amplifier. This amplifier does not use a delay element thus providing an efficiency enhancement and a size reduction by employing a distributed element negative group delay circuit. The insertion loss of the delay element in the conventional feedforward amplifier seriously degrades the efficiency. Usually, a high power co-axial cable or a delay line filter is utilized for a low loss, but the insertion loss, cost and size of the delay element still acts as a bottleneck. The proposed negative group delay circuit removes the necessity of the delay element required for a broadband signal suppression loop. With the fabricated 2-stage distributed element negative group delay circuit with -9 ns of total group delay, a 0.2 dB of insertion loss, and a 30 MHz of bandwidth for a wideband code division multiple access downlink band, the feedforward amplifier with the proposed topology experimentally achieved a 19.4 % power added efficiency and a -53.2 dBc adjacent channel leakage ratio with a 44 dBm average output power.

• Journal of Advanced Navigation Technology
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• v.10 no.3
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• pp.256-262
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• 2006

This paper proposes a new predistortion linearizer to compensate for AM/AM and AM/PM in the nonlinear characteristics of amplifier. This consists of common-emitter amplifier and schottky diode that is connected between emitter and ground. When effective resistance of the schottky diode with bias condition varies, common-emitter amplifier with series feedback has a increase of amplitude and expansion of phase. This makes a amplifier nonlinear characteristics are to be improved. The proposed linearizer and amplifier has been manufactured and tested to operate in cellular base station frequency (869~894MHz). The test results show that third order intermodulation distortion (IMD3) cab be removed by more than 10.4dB in case of CW 2-tone signals ${\Delta}f$=1MHz, and the adjacent channel power ratio (ACPR) also can be improved by more than 9.6dB for CDMA IS-95 1FA signals.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.82-90
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• 2014

In this paper, a couple of 4-channel differential transimpedance amplifier arrays are realized in a standard 0.18um CMOS technology for the applications of linear LADAR(laser detection and ranging) systems. Each array targets 1.25-Gb/s operations, where the current-mode chip consists of current-mirror input stage, a single-to-differential amplifier, and an output buffer. The input stage exploits the local feedback current-mirror configuration for low input resistance and low noise characteristics. Measurements demonstrate that each channel achieves $69-dB{\Omega}$ transimpedance gain, 2.2-GHz bandwidth, 21.5-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -20.5-dBm), and the 4-channel total power dissipation of 147.6-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations. Meanwhile, the voltage-mode chip consists of inverter input stage for low noise characteristics, a single-to-differential amplifier, and an output buffer. Test chips reveal that each channel achieves $73-dB{\Omega}$ transimpedance gain, 1.1-GHz bandwidth, 13.2-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -22.8-dBm), and the 4-channel total power dissipation of 138.4-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations.

• Journal of IKEEE
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• v.17 no.4
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• pp.393-397
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• 2013

This paper introduces the T/RX combined compact active channel module which is a key unit of the active phased array antenna(APAA) system. This module is mainly compoased of two parts for TX and RX fabricated on both sides of the active module for size reduction. The TX-part is primarily composed of a 3-stage amplifier, a microstrip phase shifter, a thermal compensation and a power detection circuit. The RX-part is composed of LNAs a microstrip phase shifter and BPFs for TX power rejection. Using the proposed design structure we can realized a compact active channel module having high performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.289-292
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• 2005

New poly-Si TFTs have been proposed and fabricated in order to increases the output channel resistance ($r_o$). The counter-doped($p^+$) source is tied to the $n^+$ source and is extended into the channel region so that it employs the reverse bias depletion in the channel. As $V_{DS}$ is increased, the depletion width is increased and the effective channel width is reduced. Therefore, the output current saturates well and the $r_o$ is increased successfully. The proposed CMOS devices may improve the amplifier gain of data driver in active-matrix displays

• ETRI Journal
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• v.28 no.5
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• pp.545-554
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• 2006

A widely tunable multi-channel grating cavity laser is proposed and experimentally demonstrated. The device is implemented in Littman configuration with an echelle grating based on Rowland circle construction and realized by monolithically integrating all elements in an InP substrate. Lasing wavelength is selected by turning on an amplifier and the appropriate channel element in the array, and it is tuned by controlling light deflection electrically. The 6-channel device exhibits a tuning range of about 50 nm with a side mode suppression ratio of more than 30 dB. This is accomplished by adjusting the applied current of the dispersive element and phase control section.

• Journal of Astronomy and Space Sciences
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• v.27 no.3
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• pp.221-230
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• 2010

A 4+12+16 amplitude phase shift keying (APSK) modulation outperforms other 32-APSK modulations in a nonlinear additive white Gaussian noise (AWGN) channel because of its intrinsic robustness against AM/AM and AM/PM distortions caused by the nonlinear characteristics of a high-power amplifier. Thus, this modulation scheme has been adopted in the digital video broadcasting-satellite2 European standard. And it has been considered for high rate transmission of telemetry data on deep space communications in consultative committee for space data systems which provides a forum for discussion of common problems in the development and operation of space data systems. In this paper, we present an improved bits-to-symbol mapping scheme with a better bit error rate for a 4+12+16 APSK signal in a nonlinear AWGN channel and propose a simple signal detection algorithm for the 4+12+16 APSK from the presented bit mapping.