[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5573/JSTS.2016.16.3.312

2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs

Lee, Sang-Kyung (Department of Radio Science and Engineering, Chungnam National University)
Bae, Kyung-Tae (Department of Radio Science and Engineering, Chungnam National University)
Kim, Dong-Wook (Department of Radio Science and Engineering, Chungnam National University)

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.16, no.3, 2016 , pp. 312-318 More about this Journal

Abstract

This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the $0.25{\mu}m$ GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

Keywords

GaN; HEMT; Power amplifier; MMIC; All-pass filter; Reactance compensation;

Citations & Related Records

Reference

1	D. W. Runton, B. Trabert, J. B. Shealy, and R. Vetury, "History of GaN: high-power RF gallium nitride (GaN) from infancy to manufacturable process and beyond," IEEE Microwave Magazine, vol. 14, no. 3, pp. 82-93, May 2013. DOI
2	M. A. Gonzalez-Garrido, J. Grajal, P. Cubilla, A. Cetronio, C. Lanzieri, and M. Uren, "2-6 GHz GaN MMIC power amplifiers for electronic warfare applications," in the Proceedings of the 3rd EuMIC Conference, pp. 83-86, Oct. 2008.
3	P. Dennler, R. Quay, and O. Ambacher, "Novel semireactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology," in 2013 IEEE MTT-S International Microwave Symposium Digest, pp. 1-4, Jun. 2013.
4	C. Campbell, C. Lee, V. Williams, M.-Y. Kao, H.-Q. Tserng, P. Saunier, and T. Balisteri, "A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology," IEEE J. Solid-State Circuits, vol. 44, no. 10, pp. 2640-2647, Oct. 2009. DOI
5	Dong-Wook Kim, "An output matching technique for a GaN distributed power amplifier MMIC using tapered drain shunt capacitors," IEEE Microwave and Wireless Components Letters, vol. 25, no. 9, pp. 603-605, Sep. 2015. DOI
6	P. Saad, C. Fager, H. Cao, H. Zirath, and K. Andersson, "Design of a highly efficient 2-4-GHz octave bandwidth GaN-HEMT power amplifier," IEEE Trans. Microw. Theory Tech., vol. 58, no. 7, pp. 1677-1685, Jul. 2010. DOI
7	R. Giofre, P. Colantonio, and F. Giannini, "1-6 GHz ultrawideband 4 W single-ended GaN power amplifier," Microwave and Optical Technology Letters, vol. 56, no. 1, pp. 215-217, Jan. 2014. DOI
8	Win Semiconductors Corp., Process Roadmap, http://www.winsemiconductorscorp.com/en_US/support.aspx?sn=6.
9	T. Arell, and T. Hongsmatip, "2-6 GHz commercial power amplifier," Applied Microwave Winter, pp. 51-56, 1993.
10	Y. Itoh, M. Nii, Y. Kohno, M. Mochizuki, and T. Takagi, "A 4 to 25 GHz 0.5 W monolithic lossy match amplifier," in IEEE MTT-S International Microwave Symposium Digest, pp. 257-260, May 1994.
11	Y. Ayasli, S. W. Miller, R. Mozzi, and L. K. Hanes, "Capacitively coupled traveling-wave power amplifier," IEEE Trans. Microw. Theory Tech., vol. 32, no. 12, pp. 1704-1709, Dec. 1984. DOI