• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.528-533
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• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.

• 한국재료학회지
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• 제26권10호
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• pp.570-576
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• 2016

Using the ultrasonic pyrolysis method, spherical $SiO_2$ powders were synthesized from aqueous $SiO_2$ sol as a starting material. The effects of pyrolysis conditions such as reaction temperature, $SiO_2$ sol concentration, and physical properties of precursor were investigated for the morphologies of the resulting $SiO_2$ powders. The particle size, shape, and crystallite size of the synthesized $SiO_2$ powders were demonstrated according to the pyrolysis conditions. Generally, the synthesized $SiO_2$ particles were amorphous phase and showed spherical morphology with a smooth surface. It was revealed that increased crystallite size and decreased spherical $SiO_2$ particle size were obtained with increases of the pyrolysis reaction temperature. Also, quantity of spherical $SiO_2$ particles decreased with the decrease in the concentration and surface tension of the precursor.

• 한국분말재료학회지
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• 제15권6호
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• pp.489-495
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• 2008

Colored tantalum oxy-nitride (TaON) and tantalum nitride ($Ta_{3}N_{5}$) were synthesized by ammonolysis. Oxygen deficient tantalum oxides ($TaO_{1.7}$) were produced by a titration process, using a tantalum chloride ($TaCl_5$) precursor. The stirring speed and the amount of $NH_{4}OH$ were important factors for controling the crystallinity of tantalum oxides. The high crystallinity of tantalum oxides improved the degree of nitridation which was related to the color value. Synthesized powders were characterized by XRD, SEM, TEM and Colorimeter.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.177-181
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• 1997

Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

• 한국세라믹학회지
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• 제36권1호
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• pp.55-60
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• 1999

Hexamethyldisilane(Si2(CH3)6)의 single precursor를 출발원료로 사용하여 화학기상증착법으로 Si 기판위에 buffer층의 형성 없이 $\beta$-SiC의 박막을 증착하였다. Si 기판과 SiO2 mask에서 SiC 박막 증착의 선택성을 위하여 HCI의 식각 가스를 도입하였고 출발원료와 HCI 가스의 공급방법을 변화시켰다. SiC 박막 증착 과정에서 HCI 가스의 도입이 막의 표면 조도에 미치는 영향을 조사하였고 Hall 측정을 통하여 SiC 막의 전기적 특성을 조사하였다.

• 한국세라믹학회지
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• 제47권3호
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• pp.205-209
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• 2010

In the last (fourth) section, the discussion will entail a silicon-nitride/silicon-carbide nanocomposite, produced by pyrolysis of liquid polymer precursors, demonstrating one of the lowest creep rates reported so far in ceramics at the comparable temperature of $1400^{\circ}C$. This was first achieved by avoiding the oxynitride glass phase at the intergrain boundaries. One important factor in the processing of these nanocomposites was the use of the electrical field assisted sintering method.

• 한국세라믹학회지
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• 제33권4호
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• pp.455-463
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• 1996

Aluminium nitride (AlN) powder was prepared by using aluminium (III) complexes with dibasic carboxylate ligands(adipato)(hydroxo) aluminium(III) and (hydroxo)(succinato)aluminium (III) as a precursor. The AlN pow-der was obtained by calcining the complexes without mixing any carbon source under a flow of ammonia at 120$0^{\circ}C$ Contary to the conventional carbothermal reduction and nitridiation the process of decarboniza-tion of the residual carbon was not required because of the reaction of ammonia with carbon at temperature >100$0^{\circ}C$. Fine AlN powder was also prepared by calcining a mixture of an (adipato)(hydroxo)aluminium(III) complex and carbon under a flow of nitrogen at 140$0^{\circ}C$ The AlN powders prepared were ultrafine and their morphology was almost the same as that of powders of two precursors.

• 한국세라믹학회지
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• 제37권2호
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• pp.174-180
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• 2000

Y-TZP/mullite composites were prepared by the infiltration of Y-TZP precursor into partially reaction-sintered mullite. The addition of Y-TZP(~7.2 wt%) increased the bend strength(207 MPa), fracture toughness(4.6MPa.m1/2) and Vickers microhardness(853kg/$\textrm{mm}^2$) of the uninfiltrated mullite sintered at 162$0^{\circ}C$ for 10h by more than 75, 70 and 105%, respectively. Residual alumina-rich glass was observed at a mullite/mullite junction, due to the mullitization reaction of silica melt with crystalline $\alpha$-Al2O3 during a final sintering. Although ZrO2 inclusions improved the final sintered density of mullite they did not effectively prevent its grain growth.

• 한국세라믹학회지
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• 제42권11호
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• pp.743-748
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• 2005

The effect of reaction parameters in the characteristic of $Pb(Zr_{0.52} Ti_{0.48})O_3$ powders by hydrothermal process was investigated in this study. In the preparation of PZT, the types of starting material and concentration of mineralizer on phase fraction and morphology was investigated respectively. Regardless the types of Pb precursor, PZT was able to synthesize ranging from 7 to 20 on KOH concentration and from 13.01 to 13.55 on pH of solution. The particle size of the PZT powders can be controlled by the mineralizer concentration and various types of precursor.