• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.419-430
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• 2022

Defects in solids play a vital role on thermoelectric properties through the direct impacts of electronic band structure and electron/phonon transports, which can improve the electronic and thermal properties of a given thermoelectric semiconductor. Defects in semiconductors can be divided into four different types depending on their geometric dimensions, and thus understanding the effects on thermoelectric properties of each type is of a vital importance. This paper reviews the recent advances in the various thermoelectric semiconductors through defect engineering focusing on the charge carrier and phonon behaviors. First, we clarify and summarize each type of defects in thermoelectric semiconductors. Then, we review the recent achievements in thermoelectric properties by applying defect engineering when introducing defects into semiconductor lattices. This paper ends with a brief discussion on the challenges and future directions of defect engineering in the thermoelectric field.

• Journal of the Korean Society of Radiology
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• v.15 no.2
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• pp.229-238
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• 2021

The selective permeate transport characteristics of iodine ion at follicle cell membrane model in thyroid which irradiated by high energy x-ray(linac 6 MV) was investigated. The follicle cell membrane model used in this experiment was a polysulfonated copolymerized membrane of poly(4-vinylpyridine-co-acrylonitrile:VP-AN). The difference of membrane thickness [2 mole AN%(w/w)], fixed carrier concentration[VP-AN%(w/w)], OH- concentration were occurred at difference of I- concentration and quantity of thyroid hormone, respectively. The tensile strength in fixed carrier concentration[VP-AN% (w/w): 0-62 %] of irradiated membrane was found to be decreased about 1.2-1.8 times than non-irradiated membrane. The I- selective permeate initial flux with increase of membrane thickness [2mole AN%(w/w)], fixed carrier concentration[VP-AN%(w/ w)], OH- concentration in irradiated membrane were found to be decreased about 2.1-4.5 times, about 2.2-2.5 times, about 2.1-2.67 times than non-irradiated membrane, respectively. As a result, the quantity of thyroid hormone was decreased at irradiated membrane than non-irradiated membrane. The decrease of thyroid hormone was occurred at hypothyroidism and hyperthyroidism, thyroid cancer, and so on. As the thyroid hormone in cell membrane model were abnormal, cell damages were appeared at cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.106-106
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• 2012

Strategies to facilitate carrier transfer/transport while preserving confined characteristics of isolated nanocrystal quantum dots (NQDs) will be discussed. Specifically, synthesis and characterizations of 1) the fabrication of neat NQD solids (assembled NQD films) with modified surfaces by attaching ligands or by applying physical processes such as heat annealing [J. Phys. Chem. C (2011), 115(3), 607] and 2) coupling NQDs to one-dimensional nanostructures such as single-walled carbon nanotubes (SWNTs) [ACS Nano, (2010) 4(1), 324] will be presented. Further, recent achievement ours of fabricating NQDs assemblies into photovoltaic devices for elucidating transfer mechanism witll be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.129-134
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• 2004

The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.112.2-112.2
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.239-242
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• 2002

Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

• Proceedings of the KIEE Conference
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• 1998.11b
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• pp.572-574
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• 1998

In this paper, we are proposed design of ATM networks to transfer for electric power system informations, proposed transport networks is partitioned management part and functional part, management part is partitioned edge network, core network, local network, authority network, functional part is partitioned core network, access network, edge area. It is based on laying and partitioning by ITU-T G.805, we also proposed ATM network requirements for Carrier Relay traffic acceptability in electric power system information.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.169-169
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• 2012

Molybdeum oxide-doped 4,4',4"-tris(2-naphthyl(phenyl)amino)tri- phenylamine (2-TNATA) layer 의 도핑농도가 75%일 때 OLED 소자의 성능이 향상되었다. Hole transport layer (HTL) 로 사용된 MOOX-doped 2-TNATA layer는 hole-injection barrier height를 낮추어서 효율적인 홀주입특성을 보였다. 그러나 도핑농도가 75%이하일 때는 소자 특성이 나빠짐을 알 수 있었다.