• Composites Research
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• v.31 no.6
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• pp.365-370
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• 2018

One of the critical parameters to improve the output power for triboelectric nanogenerators (TENGs) is the surface charge density. In this work, we modify the tribo-material of TENG by introducing the $TiO_x$ embedded Polydimethylsiloxane (PDMS) in anatase and rutile phase. The effect of dielectric constant and electronic structure of the $TiO_x$ on the capacitance of TENG and the output power as well are discussed. The surface charge density is increased as the control of the dielectric constant in difference weight percent of $TiO_x$ and PDMS. As the results of that, the 5% $TiO_x$ rutile phase and 7% $TiO_x$ anatase phase embedded PDMS exhibit the highest TENG output. The peak value of voltage/current obtained from $TiO_x$ rutile and anatase phase are ${\sim}180V/8.2{\mu}A$ and $211.6V/8.7{\mu}A$, respectively, at the external force of 5 N and working frequency of 5 Hz, which gives over 12-fold and 15-fold power enhancement compared with the TENG based on the pristine PDMS film. This study provides a better understanding for TENG performance enhancement from the materials view.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.10-14
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• 2019

Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

• Composites Research
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• v.34 no.6
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• pp.345-349
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• 2021

The continued environmental pollution caused by fossil fuel consumption has prompted researchers around the world to develop environmentally friendly energy technologies. Electrochemical energy storage is the significant area of research in this development process, and the research significance of supercapacitors in this field is increasing. Herein, a simple electrodeposition synthetic route was explored to develop the MoP layered cathode material. The layered structure provided a highly ion-accessible surface for smooth and faster ion adsorption/desorption. After Fe was doped into MoP, the morphology of MoP changes and the electrochemical performance was significantly improved. Specific capacitance value of the binder-free FeMoP electrode was found to be 269 F g^-1 at 2 A g^-1 current density in 6 M aqueous KOH electrolyte. After adding Fe to MoP, an additional redox contribution was observed in the redox conversion from Fe³⁺ to Fe²⁺ redox pair, and the charge transfer kinetics of MoP was effectively improved. This research can provide guidance for the development of supercapacitor electrode materials through simple electrodeposition technology.

• Journal of the Korean institute of surface engineering
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• v.56 no.5
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• pp.320-327
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• 2023

In this study, the nickel hydroxide (Ni(OH)₂) electrode for supercapacitor was prepared via hydrothermal method. Based on the nickel (Ni) foam, the electrode does not require any additional binder material or post-processing. Nickel nitrate (Ni(NO₃)₂) and hexamethylenetetramine (C₆H₁₂N₄) were used for synthesis, and the synthesis condition was 12 hours at 80 ℃. X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM) were used to analyze the structural characteristics of the electrode, and it shown that the nickel hydroxide was successfully prepared after only the one-step hydrothermal synthesis. The electrochemical properties were analyzed through the half-cell test. The prepared electrode shown a pair of oxidation/reduction peaks, indicating that the driving method included the redox reaction on the electrode surface. After the charge/discharge test, the specific capacitance was calculated as the value of 438 F/g at 3 A/g.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.141-146
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• 2009

A triangular microstrip antenna with T-shaped slits is proposed for tunable dual-band applications. The proposed antenna is designed using chip capacitors as a prototype. From this result the capacitor can be replaced to a varactor diode to control capacitance value. Since the input impedance of the antenna can be varied with the value of the chip capacitors on the T-shaped slits, the resonant frequency may be changed. The return losses are better than 10 dB at the lower band of $0.78{\sim}1.21$ GHz and 20 dB at the upper band of $1.97{\sim}2.17$ GHz, respectively. This antenna has the bandwidth of about 10 MHz and 50 MHz at each band. The peak gains of the antenna yield 0 dBi at the lower band and 3 dBi at the upper band, respectively. Details of the antenna design are described, and its performances are presented and analyzed.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.1
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• pp.64-70
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• 2010

This paper presents how to decide on tuning factor(${\delta}$) and quality factor(Q) values in design of single-tuned passive harmonic filters. Tuning factor(${\delta}$) and quality factor(Q) values have to consider before decision on circuit parameters of passive filters. A Study on these two value has not been scarcely performed and only experienced values has been used in passive harmonic filter design by far. As a experienced value, in cases of 5th and 7th filter, tuning factor(${\delta}$) is about 0.94 and 0.96 respectively and quality factor(Q) is, in all cases of, 50. If Single-tuned passive harmonic filter will be off-tuned, performance of filter will be decreased steeply and occur to parallel resonance between system reactance and filter capacitance. Therefore During the operation, In order not to off-tuning, Filter must be tuned at former order than actual tuning order. This is the same that total impedance of filter must have a reactive impedance. In this paper, Tuning factor(${\delta}$) is decided via example of real system and using the bode-plot and then performance of filters confirmed by filter current absorbtion rate. And Quality factor(Q) decided using the bode plot in example system and then performance of filters confirmed by filter current absorbtion rate also, which makes a calculated filter parameters to satisfy IEEE-519 distortion limits. Finally, Performance of the designed passive harmonic filter using the tuning factor(${\delta}$) and quality factor(Q) values, decided in this paper is verified by experiment and shows that 5th, 7th, 9th, 11th and 13th current harmonic distortions are decreased within IEEE-519 distortion limits, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.59-65
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• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.146-153
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• 2006

We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.10
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• pp.57-62
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• 2009

This study proposes the optimization and numerical analysis of the antenna circuit for antenna design with 13.56 MHz as transmitting wireless power, for calculating the dose radiation exposure to the real time. The 13.56 MHz of the antenna frequency bands is used to the loop antenna which is a induced current for transmitting the power with wireless the reader to the tag. The study compared to the real measurement value as calculating the value of the inductance and capacitance through the numerical analysis for the antenna LC resonance using the theory of the electromagnetic induction method. We tried to search for the resonance point as the voltages of both sides of antenna coil by the scope measures of the peak point, as we tried to be variable the resonance capacitor for the optimization tuning of the antenna circuit and the matching of the antenna port. We convince our research contributes to help the design and application technology of the wireless power transmit system which is received power supply with wireless.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.49-53
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• 1999

In this study, the characteristics of the structure of buried type capacitor for RF multi- chip-module are investigated. We developed many kinds of structures to minimize the space of capacitor in module and the value of parastic series inductance without any loss in capacitance, and in this procedure the effect of vias especially position, size, number length are analyzed and optimized. This characteristics of structures are checked through HFSS(high frequency structure simulator) of HP, and the value of parastic series inductance is calculated by equivalent circuit analysis. And ensuing the result of simulation, we made buried type capacitors using LTCC (low temperature cofired ceramic) material. In measurement of this sample, we found out the effective and precise method can be applied to buried type and characteristics of vias and striplines added for measuring are quantified.