• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1763-1768
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• 2016

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

• The Korean Journal of Physiology and Pharmacology
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• v.3 no.5
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• pp.471-479
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• 1999

The Kv channel activity in vascular smooth muscle cell plays an important role in the regulation of membrane potential and blood vessel tone. It was postulated that increased blood vessel tone in hypertension was associated with alteration of Kv channel and membrane potential. Therefore, using whole cell mode of patch-clamp technique, the membrane potential and the 4-AP-sensitive Kv current in cerebral arterial smooth muscle cells were compared between normotensive rat and one-kidney, one-clip Goldblatt hypertensive rat (lK,lC-GBH rat). Cell capacitance of hypertensive rat was similar to that of normotensive rat. Cell capacitance of normotensive rat and 1K,lC-GBH rat were $20.8{\pm}2.3$ and $19.5{\pm}1.4$ pF, respectively. The resting membrane potentials measured in current clamp mode from normotensive rat and 1K,lC-GBH rat were $-45.9{\pm}1.7$ and $-38.5{\pm}1.6$ mV, respectively. 4-AP (5 mM) caused the resting membrane potential hypopolarize but charybdotoxin $(0.1\;{\mu}M)$ did not cause any change of membrane potential. Component of 4-AP-sensitive Kv current was smaller in 1K,lC-GBH rat than in normotensive rat. The voltage dependence of steady-state activation and inactivation of Kv channel determined by using double-pulse protocol showed no significant difference. These results suggest that 4-AP-sensitive Kv channels playa major role in the regulation of membrane potential in cerebral arterial smooth muscle cells and alterations of 4-AP-sensitive Kv channels would contribute to hypopolarization of membrane potential in 1K,lC-GBH rat.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.266-270
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• 2011

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.194-195
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• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.207-210
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• 2008

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4}$, $2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan6 of XLPE/semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan6 was small. Also, To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.69-72
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• 2014

We investigated current-voltage (I-V) and capacitance (C)-V characteristics of solution-processed thin film solar cells, consisting of $Cu(In,Ga)S_2$ and $CuInS_2$ stacked absorber layers. The ideality factors, extracted from the temperature-dependent I-V curves, showed that the tunneling-mediated interface recombination was dominant in the cells. Rapid increase of both series- and shunt-resistance at low temperatures would limit the performance of the cells, requiring further optimization. The C-V data revealed that the carrier concentration of the $CuInS_2$ layer was about 10 times larger than that of the $Cu(In,Ga)S_2$ layer. All these results could help us to find strategies to improve the efficiency of the solution-processed thin film solar cells.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1523-1526
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• 2012

In this work, we prepared activated multi-walled carbon nanotubes/polyacrylonitrile (A-MWCNTs/C) composites by film casting and activation method. Electrochemical properties of the composites were investigated in terms of serving as MWCNTs-based electrode materials for electric double layer capacitors (EDLCs). As a result, the A-MWCNTs/C composites had much higher BET specific surface area, and pore volume, and lower volume ratio of micropores than those of pristine MWCNTs/PAN ones. Furthermore, some functional groups were added on the surface of the A-MWCNTs/C composites. The specific capacitance of the A-MWCNTs/C composites was more than 4.5 times that of the pristine ones at 0.1 V discharging voltage owing to the changes of the structure and surface characteristics of the MWCNTs by activation process.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.270-272
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• 1997

In order to a study on the electrical properties of silicone gel due to the curing condition, the volume resistivity test is researched. For experiment, we have made up several samples of different curing temperature and time such as 1[H], 2[H] at 125[$^{\circ}C$], 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$], 180[$^{\circ}C$]. A measurement of volume resistivity using the VMG-1000 highmegohm meter is recorded after 10 minutes when the each voltage, and DC 500[V] and 1000[V] is applied. A coaxial cylindrical liquid electrode to measure volume resistivity of specimen is used, and its geometric capacitance is 2[pF]. As a result of the experiment, the electrical properties of specimen cured at 170[$^{\circ}C$] for 2[H] is superior.