Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.194-195
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- 2006
Fabrication and Properties of Aluminum oxide/6H-SiC Structures using Sputtering Method
스퍼터링법을 이용한 산화알루미늄/6H-SiC 구조의 제작 및 특성
- Jung, Soon-Won (Youngdong Univ.) ;
- Choi, Haeng-Chul (Cheongju Univ.) ;
- Kim, Jae-Hyun (Cheongju Univ.) ;
- Jeong, Sang-Hyun (Cheongju Univ.) ;
- Kim, Kwang-Ho (Cheongju Univ.) ;
- Koo, Kyung-Wan (Hoseo Univ.)
- Published : 2006.06.22
Abstract
Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of