Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
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Electrical Characteristics of Solution-processed Cu(In,Ga)S2 Thin Film Solar Cells

용액 공정으로 만든 Cu(In,Ga)S2 박막태양전지의 전기적 특성

  • Kim, Ji Eun (Department of Physics, Ewha Womans University) ;
  • Min, Byoung Koun (Clean Energy Research Center, Korea Institute of Science and Technology) ;
  • Kim, Dong-Wook (Department of Physics, Ewha Womans University)
  • 김지은 (이화여자대학교, 물리학과) ;
  • 민병권 (한국과학기술연구원, 청정에너지연구센터) ;
  • 김동욱 (이화여자대학교, 물리학과)
  • Received : 2014.05.26
  • Accepted : 2014.06.02
  • Published : 2014.06.30
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Abstract

We investigated current-voltage (I-V) and capacitance (C)-V characteristics of solution-processed thin film solar cells, consisting of $Cu(In,Ga)S_2$ and $CuInS_2$ stacked absorber layers. The ideality factors, extracted from the temperature-dependent I-V curves, showed that the tunneling-mediated interface recombination was dominant in the cells. Rapid increase of both series- and shunt-resistance at low temperatures would limit the performance of the cells, requiring further optimization. The C-V data revealed that the carrier concentration of the $CuInS_2$ layer was about 10 times larger than that of the $Cu(In,Ga)S_2$ layer. All these results could help us to find strategies to improve the efficiency of the solution-processed thin film solar cells.

Keywords