• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• 전기의세계
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• v.26 no.4
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• pp.61-67
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• 1977

This paper treats the Ultrasonic effects on the break down characteristics of Liquid Dielectric Material 1) Relative Dielectric constant, Es of Liquid Dielectric Material at a constant temperature decreases in proportion to the irradiated time of Ultrasonic radiation and its intensity, and reaches to a certain saturated value. The saturated value varies with the intensity of Ultrasonic radiation. 2) Power factor of Liquid Dielectric Material at a constant temperature increases in proportion tothe irradiated time of Ultrasonic radiation and its intensity, and reaches to a certain saturated value. The saturated value varies with the intensity of Ultrasonic radiation. 3) Relative resistance of Liquid Dielectric Material at a constant temperature decrease with the irradiated time of Ultrasonic radiation, but the effect of its intensity is very irregular. 4) Break-down strength of Liquid Dielectric Material, at a constant temperature decreases with the irradiated time of Ultrasonic radiation and its intensity, and then reaches to a saturated value.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.143-148
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• 1998

A dynamic electrical parameter monitoring device was designed to simultaneously record the instantaneous value of voltage, current, power, and resistance during spot welding. The data obtained using this technique have been analyzed in term of the relationships of these parameters to the phenomena occuring during the formation(surface break-down, nugget formation and mechanical collapse) of spot weld. Finally, a database implementation is undertaken to develop techniques for improving weld quality of the resistance spot welder.

• Journal of Korean Society of Steel Construction
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• v.8 no.3 s.28
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• pp.47-54
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• 1996

Recently Sucessive progress in train technic has enabled us to constructed high-speed railways for ourselves. This caused more rapid train more pressure on a track and speedier track break-down. Especially in the construction of high-speed rails for high-speed traveling and safety accurate breaking distance is essential and not only computation of rolling resistance in theory but also verification through real measurement are important in basic material for breaking and starting load caused during the train running. In this study, we measured traveling resistance and calculated traveling resistance formula in the case of the SAEMA-EUL which consists of main part of current passenger trains and frights in this country.

• Proceedings of the Korea Concrete Institute Conference
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• 2003.11a
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• pp.359-362
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• 2003

Carbon fiber sheet is attractive due to its good tensile strength, resistance to corrosion, and low weight. The strengthening of concrete structures with externally bonded carbon fiber sheets is increasingly being used for repair and rehabilitation of existing structures. However CFS strengthened beams break down under the service loads. As rupture strain is not reached ultimate value, reduction of the tensile strength is recommended. This study evaluate CFS tensile strength reduction factor which is required to analyze bending moment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.69-71
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• 2003

Mechanical Properties, such as tensile strength, elongation, and tear strength, decreased according to increasing the load of ATH, volume resistivity, AC break down strength, and tracking resistance for HVI SC contained ATH treated by vinyl Silane were better than those for HVI SC were contained ATH treated by other surface treatment agent, such as stearic acid and acryl silane.

• Proceedings of the Korean Society of Crop Science Conference
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• 2001.05a
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• pp.224-225
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• 2001

• Interaction and multiscale mechanics
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• v.4 no.4
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• pp.247-255
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• 2011

Understanding the structural stability of carbon nanostructure under heat treatment is critical for tailoring the thermal properties of carbon-based material at small length scales. We investigate the heat resistance of the single carbon nanoball ($C_{60}$) and carbon nanoonions ($C_{20}@C_{80}$, $C_{20}@C_{80}@C_{180}$, $C_{20}@C_{80}@C_{180}C_{320}$) by performing molecular dynamics simulations. An empirical many-body potential function, Tersoff potential, for carbon is employed to calculate the interaction force among carbon atoms. Simulation results shows that carbon nanoonions are less resistive against heat treatment than single carbon nanoballs. Single carbon nanoballs such $C_{60}$ can resist heat treatment up to 5600 K, however, carbon nanoonions break down after 5100 K. This intriguing result offers insights into understanding the thermal-mechanical coupling phenomena of nanodevices and the complex process of fullerenes' formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.