• 전자공학회논문지A
• /
• 제33A권4호
• /
• pp.121-128
• /
• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.

• 한국재료학회지
• /
• 제12권9호
• /
• pp.718-723
• /
• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• 반도체디스플레이기술학회지
• /
• 제14권1호
• /
• pp.27-30
• /
• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
• /
• 제50권6호
• /
• pp.263-272
• /
• 2001

The paper presents the design of a segmented type synchronous reluctance motor(SynRM) to increase its torque and power factor. The main feature of a segmented type synchronous reluctance motor is the flux barrier. Thus, the design process to find optimum value of various geometric parameters including flux barrier will be explained. Optimum value of each parameter is found where the d, q inductance difference and saliency ratio are maximized because these inductance characteristics are related to torque and power factor. Finite Element Analysis will be used to simulate motor characteristics. Analysis results of redesigned SynRM show higher saliency ratio over 10 and improved value of maximum power factor.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 C
• /
• pp.1816-1818
• /
• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• 한국진공학회지
• /
• 제9권4호
• /
• pp.419-427
• /
• 2000

본 연구는 원자의 주변 환경에 따른 각각의 확산 속도를 구할 수 있는 기구를 제시하였다. STM 또는 HRLEED 등의 실험과 kinetic Monte Carlo(KMC) 시뮬레이션 계산과의 비교를 통하여 테라스 위 흡착 원자의 확산장벽, step 끝 부착 원자의 탈착 확산 장벽, 잘 알려진 Schwoebel 장벽을 포함한 각각의 확산 장벽을 구할 수 있었다. 팔-넓이, 군집 밀도, 거칠기 등이 시뮬레이션 계산과 실험 결과를 비교하는 데에 가장 적절한 원자단위의 구조변수들임을 확인하였고, 특히 아직 잘 사용되지 않은 구조 계수인 가지폭이 확산 장벽을 구별하여 구하는 데에 중요한 역할을 하는 것을 확인하였다.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권1호
• /
• pp.56-63
• /
• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제7권2호
• /
• pp.76-81
• /
• 2007

Threshold voltage ($V_{th}$) modeling of doublegate (DG) MOSFETs was performed, for the first time, by considering barrier lowering in the short channel devices. As the gate length of DG MOSFETs scales down, the overlapped charge-sharing length ($x_h$) in the channel which is related to the barrier lowering becomes very important. A fitting parameter ${\delta}_w$ was introduced semi-empirically with the fin body width and body doping concentration for higher accuracy. The $V_{th}$ model predicted well the $V_{th}$ behavior with fin body thickness, body doping concentration, and gate length. Our compact model makes an accurate $V_{th}$ prediction of DG devices with the gate length up to 20-nm.

• 전기학회논문지
• /
• 제63권1호
• /
• pp.80-84
• /
• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

• 한국전자파학회논문지
• /
• 제24권3호
• /
• pp.324-330
• /
• 2013

본 논문은 대기압 환경에서 발생하는 유전체 장벽 방전(dielectric barrier discharge: DBD) 플라즈마의 전자파 산란 특성을 측정하였다. 본 논문에서는 기본적인 DBD 플라즈마 발생기 구조를 병렬로 연결하여 넓은 면적의 플라즈마 발생기를 제작하였고, 14 kV, 4 kHz의 고전압 발생장치를 이용해 플라즈마가 발생하는 것을 확인하였다. 두 개의 혼 안테나와 벡터 네트워크 분석기를 이용해 S-parameter의 비교를 통해 전자파 산란 특성을 측정하였다. 전방 산란의 경우 제작된 플라즈마 발생기의 구조적 특성으로 인해 안테나의 편파에 따라 다른 결과 값을 얻었다. 편파가 수평일 때 최대 2 dB의 산란파 감쇠 특성을 확인할 수 있었다. 또한, 편파가 수평일 경우, 플라즈마 발생기 뒤에 PEC를 설치한 후 후방 산란 특성을 측정하였다. 그 결과, 5 GHz에서 안테나 관찰 각도가 $40^{\circ}C$, $60^{\circ}C$일 때 최대 2 dB 산란파 감쇠 특성을 얻었다.