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Electrical Characteristics of the SiC SBD Prepared by using the Facing Targets Sputtering Method  

Lee, Jinseon (Department of Electrical engineering, Gachon University)
Kang, Tai Young (Powercubesemi Incorporation)
Kim, Kyung Hwan (Department of Electrical engineering, Gachon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.14, no.1, 2015 , pp. 27-30 More about this Journal
Abstract
SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.
Keywords
Silicon carbide; Facing Targets sputtering; Schottky barrier diode; Schottky diode parameter;
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