• Title/Summary/Keyword: barrier parameter

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Prediction Model for Saturated Hydraulic Conductivity of Bentonite Buffer Materials for an Engineered-Barrier System in a High-Level Radioactive Waste Repository

  • Gi-Jun Lee;Seok Yoon;Bong-Ju Kim
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.21 no.2
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    • pp.225-234
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    • 2023
  • In the design of HLW repositories, it is important to confirm the performance and safety of buffer materials at high temperatures. Most existing models for predicting hydraulic conductivity of bentonite buffer materials have been derived using the results of tests conducted below 100℃. However, they cannot be applied to temperatures above 100℃. This study suggests a prediction model for the hydraulic conductivity of bentonite buffer materials, valid at temperatures between 100℃ and 125℃, based on different test results and values reported in literature. Among several factors, dry density and temperature were the most relevant to hydraulic conductivity and were used as important independent variables for the prediction model. The effect of temperature, which positively correlates with hydraulic conductivity, was greater than that of dry density, which negatively correlates with hydraulic conductivity. Finally, to enhance the prediction accuracy, a new parameter reflecting the effect of dry density and temperature was proposed and included in the final prediction model. Compared to the existing model, the predicted result of the final suggested model was closer to the measured values.

An Analytical Model of the First Eigen Energy Level for MOSFETs Having Ultrathin Gate Oxides

  • Yadav, B. Pavan Kumar;Dutta, Aloke K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.3
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    • pp.203-212
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    • 2010
  • In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

Dependence of Drain Induced Barrier Lowering for Doping Profile of Channel in Double Gate MOSFET (이중게이트 MOSFET에서 채널내 도핑분포에 대한 드레인유기장벽감소 의존성)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.9
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    • pp.2000-2006
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    • 2011
  • In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

High Performance Barrier Technologies for Tire Innerliner (타이어 인너라이너용 고차단화 기술)

  • Kang, Yong-Gu;Lee, Seong-Peal;Han, Min-Hyun
    • Elastomers and Composites
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    • v.46 no.2
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    • pp.102-111
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    • 2011
  • The innerliner for a tire has excellent impermeability, air retention and good flex properties. The innerliner offers a role to improve performance parameter, such as air retention and tire durability that is of praricular importance for commercial tires. In order to improve the gas barrier properties of a innerliner, most of the innerliner rubbers, such as a halogenated butyl rubber(HIIR), brominated poly(isobutylene-co-isoprene)(BIIR), brominated polyisobutylene-co-paramethylstyrene(BIMS) are used as nanocomposites with nano fillers such as silicates, graphite etc. Innerliners based on nanocomposites may allow gauge adjustments and permeability reductions with potential improvement in tire durability. This article discusses potential innerliner permeablity reduction and compounding parameters on the properties of nanocomposite based innerliners.

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET Using Gaussian Distribution (가우스분포를 이용한 이중게이트 MOSFET의 드레인유기장벽감소 분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.2
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    • pp.325-330
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    • 2012
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

Characteristics of Hydrogen Generation from Methanol and Ethanol using Cylindrical Barrier Discharge (실린더형 무성방전을 이용하여 메탄올과 에탄올로부터 수소발생 특성)

  • Park, Jae-Youn
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.8
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    • pp.32-39
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    • 2010
  • Hydrogen is sustainable energy without environment pollution. In this study, experiments and analysis of hydrogen generation from gases methanol and ethanol using cylindrical barrier discharge reactor was carried out. The discharge reactor to generate hydrogen molecules used in this work is one type of Non-thermal Plasma (NTP) reactors and neon-transformer as power source to make a plasma was used. Hydrogen concentrations were measured as parameters of applied voltage, concentrations of methanol and ethanol, and flow rates of carrier gases($N_2$). Hydrogen generation increased according to applied voltage and produced largely in case of methanol compared with ethanol. It is thought that the reason is deeply related with those different chemical structures. Energy yield of hydrogen generation in case of ethanol decreases according to increasing applied voltage, but that in case of methanol has a peak at applied voltage of 22[kV] and decreased. Specifically, hydrogen generation increased with increasing applied voltage, but low voltage was better, which is the best parameter in the aspects of energy efficiency.

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET Using Gaussian Distribution (가우스분포를 이용한 이중게이트 MOSFET의 드레인유기장벽감소분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.878-881
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    • 2011
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

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Evaluation of Mechanical Performance Considering Prolonged Length of Glass Fiber-Reinforced Composite on Structure Weakness by Thermal Stress at Secondary Barrier in Cryogenic Liquified Gas Storage (극저온 액화가스 화물창 2차방벽 구조 열 응력 취약 부 Prolonged 길이 고려 유리섬유 강화 복합재 기계적 물성 평가)

  • Yeon-Jae Jeong;Hee-Tae Kim;Jeong-Dae Kim;Jeong-Hyun Kim;Seul-Kee Kim;Jae-Myung Lee
    • Composites Research
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    • v.36 no.4
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    • pp.246-252
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    • 2023
  • A secondary barrier made of glass fiber reinforced composites has been installed infinitely using automatic bonding machine(ABM) in membrane type LNG cargo containment system (CCS). At the same time, significant thermal stress due to cryogenic heat shrinkage has occurred in the composite on the non-bonding area between the adhesive fixation at both ends. There have been studies from the perspective of structural safety evaluation taking this into account, but none that have analyzed mechanical property taking an prolonged length into account. In this study, 2-parameter Weibull distribution statistical analysis was used to standardize reliable mechanical property for actual length, taking into account the composite's brittle fracture of ceramic material with wide fracture strength dispersion. Related experimental data were obtained by performing uniaxial tensile tests at specific temperatures below cryogenic condition considering LNG environment. As a result, the mechanical strength increased about 1.5 times compared to -20℃ at -70℃ and initial non-linear behavior of fiber stretched was suppressed. As the temperature decreased until the cryogenic, the mechanical strength continued to increase due to cold brittleness. The suggested mechanical property in this study would be employed to secure reliable analysis support material property when assessing the safety of secondary barrier's structures.

Impact Angle Control Guidance Synthesis for Evasive Maneuver against Intercept Missile

  • Yogaswara, Y.H.;Hong, Seong-Min;Tahk, Min-Jea;Shin, Hyo-Sang
    • International Journal of Aeronautical and Space Sciences
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    • v.18 no.4
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    • pp.719-728
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    • 2017
  • This paper proposes a synthesis of new guidance law to generate an evasive maneuver against enemy's missile interception while considering its impact angle, acceleration, and field-of-view constraints. The first component of the synthesis is a new function of repulsive Artificial Potential Field to generate the evasive maneuver as a real-time dynamic obstacle avoidance. The terminal impact angle and terminal acceleration constraints compliance are based on Time-to-Go Polynomial Guidance as the second component. The last component is the Logarithmic Barrier Function to satisfy the field-of-view limitation constraint by compensating the excessive total acceleration command. These three components are synthesized into a new guidance law, which involves three design parameter gains. Parameter study and numerical simulations are delivered to demonstrate the performance of the proposed repulsive function and guidance law. Finally, the guidance law simulations effectively achieve the zero terminal miss distance, while satisfying an evasive maneuver against intercept missile, considering impact angle, acceleration, and field-of-view limitation constraints simultaneously.

A parameter study on the pre-heat treatment for the fabrication of a large grain YBCO bulk superconductor without intermediate grinding step

  • Hong, Yi-Seul;Kim, Chan-Joong;Lee, Hee-Gyoun
    • Progress in Superconductivity and Cryogenics
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    • v.22 no.1
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    • pp.1-6
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    • 2020
  • This is a parameter study for the direct fabrication of a large grain YBCO bulk superconductors using Y2O3, BaCO3 and CuO powders without any grinding step. The cracks, which have been formed due to volume contraction during calcination step, have been prevented by controlling the heating rate at 930~950 ℃. It has been observed that multi-grain growth has occurred due to the dissolution of Sm123 seed due to the retention of carbon in Ba-Cu-O melt. In order to accelerate the carbon release in prior calcination heat treatment, the reduction of pellet thickness and the drilling of artificial holes have been applied. Single-grain YBCO bulk superconductor has been successfully fabricated by stacking multiple thin slab. However, the crack formation has been rather prominent for the compact with artificial holes. The use of buffer pellet, which is supposed to act as diffusion barrier, has prevented the dissolution of Sm123 seed crystal and has led to the growth of single grain of high content of carbon containing specimen.