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http://dx.doi.org/10.6109/jkiice.2012.16.2.325

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET Using Gaussian Distribution  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.2, 2012 , pp. 325-330 More about this Journal
Abstract
In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.
Keywords
DG MOSFET; doping distribution; Gaussian distribution; Poisson equation; DIBL; short channel effect;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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1 A. Sahoo, P.Kumar and S. Mahapatra,"A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors," IEEE Trans. Electron Devices, vol. 57, no.3, pp.632-636, 2010.   DOI   ScienceOn
2 P.K. Tiwari, S. Kumar, S. Mittal, V. Srivastava, U. Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs with Vertical Gaussian Doping Profile," IMPACT-2009, pp.52-55, 2009.
3 A.S.Havaldar, G.Katti, N.DasGupta and A.DasGupta, "Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 53, no.4, pp.737-741, 2006.   DOI   ScienceOn
4 정학기, "이중게이트 MOSFET에서 채널내 도핑분포에 대한 드레인유기장벽감소 의존성", 한국해양정보통신 논문집, vol. 15, no. 9, pp.2000-2006, 2011.   과학기술학회마을   DOI   ScienceOn
5 H.K.Jung,"Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function", International Journal of Maritime Information and Communication Sciences, vol.9, no.3, pp.310-314, 2011.   과학기술학회마을   DOI   ScienceOn
6 T.Ghani et al. "Scaling challenges and device design requirements for high performance sub 50nm gate length planar CMOS transistor," Proc. Symp. VLSI Technol., pp.174-175, 2000.
7 S.Dimitrijev, Principles of Semiconductor devices, 1st, Oxford Press, 2006.
8 S.Namana, S.Baishya and K.Koley," A Subthreshold Surface Potential Modeling of Drain/Source Edge Effect on Double Gate MOS Transistor," 2010 International Conference on Electronics and Information Engineering, vol. 1, pp.87-91, 2010.