• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.4
• /
• pp.121-128
• /
• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.

• Korean Journal of Materials Research
• /
• v.12 no.9
• /
• pp.718-723
• /
• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• Journal of the Semiconductor & Display Technology
• /
• v.14 no.1
• /
• pp.27-30
• /
• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• The Transactions of the Korean Institute of Electrical Engineers B
• /
• v.50 no.6
• /
• pp.263-272
• /
• 2001

The paper presents the design of a segmented type synchronous reluctance motor(SynRM) to increase its torque and power factor. The main feature of a segmented type synchronous reluctance motor is the flux barrier. Thus, the design process to find optimum value of various geometric parameters including flux barrier will be explained. Optimum value of each parameter is found where the d, q inductance difference and saliency ratio are maximized because these inductance characteristics are related to torque and power factor. Finite Element Analysis will be used to simulate motor characteristics. Analysis results of redesigned SynRM show higher saliency ratio over 10 and improved value of maximum power factor.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1816-1818
• /
• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.419-427
• /
• 2000

We propose a method to obtain various diffusion parameters of deposited atom. By comparing the results of kinetic Mote Carlo (KMC) simulation with the results of STM, HRLEED experiments, we can determine diffusion parameters including the hopping barrier of an adatom on terrace, detachment barrier at the step edge, and well known Schwoebel barrier. It is found that the branch-width, island density, and roughness were suitable atomic scale structure parameters for comparing simulation calculation with experimental results, and especially, it is found that the parameter branch-width which is not widely used in thin film growth study, plays an important role in determining diffusion barriers.

• Electrical & Electronic Materials
• /
• v.8 no.1
• /
• pp.56-63
• /
• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.2
• /
• pp.76-81
• /
• 2007

Threshold voltage ($V_{th}$) modeling of doublegate (DG) MOSFETs was performed, for the first time, by considering barrier lowering in the short channel devices. As the gate length of DG MOSFETs scales down, the overlapped charge-sharing length ($x_h$) in the channel which is related to the barrier lowering becomes very important. A fitting parameter ${\delta}_w$ was introduced semi-empirically with the fin body width and body doping concentration for higher accuracy. The $V_{th}$ model predicted well the $V_{th}$ behavior with fin body thickness, body doping concentration, and gate length. Our compact model makes an accurate $V_{th}$ prediction of DG devices with the gate length up to 20-nm.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.63 no.1
• /
• pp.80-84
• /
• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.3
• /
• pp.324-330
• /
• 2013

This paper presented measurement results of scattering characteristics of dielectric barrier discharge (DBD) plasma at atmospheric pressure. In this paper, plasma actuator is fabricated by parallel connecting of basic configuration of DBD plasma actuator, then plasma could be generated by applying 14 kV, 4 kHz of high voltage generator. In order to measure the scattering characteristics of DBD plasma, in this paper, two horn antennas and vector network analyzer are used to compare the S-parameter. Because of the structure of fabricated plasma generator, different result is obtained as antenna polarization changes. When antenna polarization is parallel to electrodes of plasma generator, the scattered field is reduced by 2 dB in maximum. In addition, for parallel polarization case, PEC is set up behind the plasma generator to measure backward scattered field. When the observation angles are $40^{\circ}C$ and $60^{\circ}C$, the amount of reduced scattered field is 2 dB in maximum at 5 GHz.