• 제목/요약/키워드: automotive semiconductor

검색결과 116건 처리시간 0.022초

Design of a Transceiver Transmitting Power, Clock, and Data over a Single Optical Fiber for Future Automotive Network System

  • Bae, Woorham;Ju, Haram;Jeong, Deog-Kyoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권1호
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    • pp.48-55
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    • 2017
  • This paper proposes a new link structure that transmits power, clock, and data through a single optical fiber for a future automotive network. A pulse-position modulation (PPM) technique is adopted to guarantee a DC-balanced signal for robust power transmission regardless of transmitted data pattern. Further, circuit implementations and theoretical analyses for the proposed PPM transceiver are described in this paper. A prototype transceiver fabricated in 65-nm CMOS technology, is used to verify the PPM signaling part of the proposed system. The prototype achieves a $10^{-13}$ bit-error rate and 0.188-UI high frequency jitter tolerance while consuming 14 mW at 800 Mb/s.

Automotive High Side Switch Driver IC for Current Sensing Accuracy Improvement with Reverse Battery Protection

  • Park, Jaehyun;Park, Shihong
    • Journal of Power Electronics
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    • 제17권5호
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    • pp.1372-1381
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    • 2017
  • This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

InGaAs Nano-HEMT Devices for Millimeter-wave MMICs

  • Kim, Sung-Won;Kim, Dae-Hyun;Yeon, Seong-Jin;Seo, Kwang-Seok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권3호
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    • pp.162-168
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    • 2006
  • To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

Improved Crash Detection Algorithm for Vehicle Crash Detection

  • An, Byoungman;Kim, YoungSeop
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.93-99
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    • 2020
  • A majority of car crash is affected by careless driving that causes extensive economic and social costs, as well as injuries and fatalities. Thus, the research of precise crash detection systems is very significant issues in automotive safety. A lot of crash detection algorithms have been developed, but the coverage of these algorithms has been limited to few scenarios. Road scenes and situations need to be considered in order to expand the scope of a collision detection system to include a variety of collision modes. The proposed algorithm effectively handles the x, y, and z axes of the sensor, while considering time and suggests a method suitable for various real worlds. To reduce nuisance and false crash detection events, the algorithm discriminated between driving mode and parking mode. The performance of the suggested algorithm was evaluated under various scenarios, and it successfully discriminated between driving and parking modes, and it adjusted crash detection events depending on the real scenario. The proposed algorithm is expected to efficiently manage the space and lifespan of the storage device by allowing the vehicle's black box system to store only necessary crash event's videos.

고점도 용액 정밀토출을 위한 노즐 직경 및 표면젖음성 특성 연구 (Study of the Geometry and Wettability of Nozzles for Precise Ejection of High Viscous Liquids)

  • 이상현;배재현;이상민
    • 한국기계가공학회지
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    • 제20권12호
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    • pp.123-128
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    • 2021
  • Liquid dispensing systems are extensively used in various industries such as display, semiconductor, and battery manufacturing. Of the many types of dispensers, drop-on-demand piezoelectric jetting systems are widely used in semiconductor industries because of their ability to dispense minute volumes with high precision. However, due to the problems of nozzle clogging and undesirable dispensing behavior in these dispensers, which often result in device failure, the use of highly viscous fluids is limited. Accordingly, we studied the behaviors of droplet formation based on changes in viscosity. The effects of surface energy and the inner diameters of needle-type nozzles were also studied. Results showed that nozzles with lower surface energies reduced the ejection volume of droplets when a smaller nozzle diameter (0.21 mm in this study) was applied. These results indicate that the hydrophobic treatment of nozzle surfaces and the use of smaller nozzle diameters are critical factors enabling the use of highly viscous fluids in precision dispensing applications.

고내압 FET 테스트 장비용 전원공급장치 개발 (Development of Power Supply for High-voltage FET Test)

  • 박대수;오성철
    • 한국산학기술학회논문지
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    • 제15권11호
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    • pp.6821-6829
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    • 2014
  • 자동차에서 반도체 소자의 사용이 증가하고 있으며 특히 친환경자동차의 구동장치 부품으로서 고내압 스위칭 사용 증가가 예상된다. 그러나 고내압 소자의 경우는 신뢰성 시험을 하기 위한 장비가 국산화 되어 있지 않다. 그러므로 고내압 소자를 시험하기 위한 전원장치의 개발을 위하여 관련 시험규격을 분석하였다. 특히 자동차용 반도체 신뢰성 시험을 위한 AEC(Automotive Electronic Council) Q101에서 시험항목을 분석하여 개발이 필요한 전원장치의 사양을 결정하였다. 주회로는 풀브리지 컨버터로 선정하였으며 주어진 장치 사양에 따라 각종 변수를 설계하였고, 회로 변수의 적절성은 시뮬레이션을 통하여 검증하였다. 또한 전력부의 병렬운전. 패턴 운전을 위한 인터페이스를 설계하였다. 이를 통해 개발된 제품은 시험을 통하여 특성을 검증하였다.

Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2

  • Jo, Yoo Jin;Moon, Jeong Hyun;Seok, Ogyun;Bahng, Wook;Park, Tae Joo;Ha, Min-Woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.265-270
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    • 2017
  • 4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

반도체 테스트 핸들러 픽커 검사장비 프레임에 대한 진동해석 (Vibration Analysis on the Inspection Equipment Frame of a Semiconductor Test Handler Picker)

  • 김영춘;김영진;국정한;조재웅
    • 한국산학기술학회논문지
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    • 제15권8호
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    • pp.4815-4820
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    • 2014
  • 최근에 반도체 칩이 소형화, 대용량화, 고집적화가 되고 있어 그 정밀도 및 신뢰성의 확보를 위해 반도체 테스트 핸들러 장비에서 픽앤플레이스의 개발이 필요하다. 본 연구에서는 반도체 테스트 핸들러 픽커 검사장비 프레임에 대한 진동해석을 하여 고유진동수와 하모닉 반응의 특성을 연구하였다. 해석모델로서는 세 가지 모델로서 픽앤플레이스 장치가 위 가이드라인의 왼쪽에 있는 경우(Case 1), 가운데에 있는 경우(Case 2) 및 오른쪽에 있는 경우(Case 3)이다. 이 프레임 모델들에 대해서 6차 모드까지의 고유진동수 범위는 80Hz~500Hz가 된다. Harmonic Response 해석 결과, 프레임에 공진이 발생할 때, Case 2는 Case 1과 Case 3보다 더 큰 52.802MPa의 최대 등가응력을 나타났다. 세 모델 중, Case 2의 경우가 진동에 의한 파손에 가장 강함을 알 수 있다. 본 연구의 해석 결과를 이용하여 시스템의 안전한 작업환경으로 실제 적용할 수 있는 모델 설계가 효율적으로 가능하다고 사료된다.

영상 측정 데이터를 이용한 위치보정 레이저 가공시스템 개발 (Development of Auto Positioning Laser System by using Image Measurement Data)

  • 표창률
    • 한국기계가공학회지
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    • 제12권3호
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    • pp.36-40
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    • 2013
  • Recently, electronic equipments become smaller, more functional, and more complex than before. As these trends, MLC(multi-layer ceramic) circuit has been emerged to a promising technology in semiconductor inspection industry. Especially, multi-layer ceramic which is consisted of many fine-pitch multi-hole is used to produce a semiconductor inspection unit. The hole is processed by UV laser. But, working conditions are changed all the time. Therefore real time measurement of fine-pitch multi-hole is very important method for ensuring performance. In this paper we found the best method for illuminating and auto focusing. And, we verified our equipment.

Numerical Study on the Air-Cushion Glass Transportation Unit for LCD Panels

  • Im Ik-Tae;Jeon Hyun-Joo;Kim Kwang-Sun
    • 반도체디스플레이기술학회지
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    • 제5권1호
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    • pp.27-31
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    • 2006
  • Non-contact transportation system using air cushion for the manufacturing of large-sized LCD panels was considered. Flow characteristics between air pad and glass plate was analyzed using computational fluid dynamics method to obtain optimized air pad configurations. Effects of the design variables such as hole arrays from which gas is injected, gas-feeding method into the gas supplying channels, and horizontal and vertical pitches of clusters of holes were studied. Optimized air pad unit gave evenly distributed pressure contour on the glass surface and well-suspended levitation height in the experiment.

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