• Title/Summary/Keyword: asymmetric loss

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Time to Invest in Real Asset with Option Pricing Theory - Focused on REITs - (옵션가격결정이론에 기반한 실물자산의 투자시기 결정 - 부동산투자신탁회사(REITs)를 중심으로 -)

  • Jun, Jae-Bum;Lee, Sam-Su
    • Korean Journal of Construction Engineering and Management
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    • v.11 no.6
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    • pp.54-64
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    • 2010
  • A firm decides to go to the project based on its investment analysis. However, the cash flows generated from the real project can not be always coincident with what expected as it follows uncertain behavior and the asymmetric payoff caused by the managerial flexibilities involved in the real asset affects the project value. Amongst various managerial flexibilities entailed in most of the real assets, although investment delay has been known to enhance the project value thanks to its ability to provide new market information to management, the related research to select the time to invest have been just few. Therefore, this research aims to show the theoretical framework to decide when to invest reflecting the behaviors of increasing project value and loss recovery cost due to investment delay with option pricing, related financial economic, and variational theories.

Bending Fatigue Characteristics of Surface-Antenna-Structure (복합재료 표면안테나 구조의 굽힘 피로특성 연구)

  • Kim D. H;Hwang W;Park H. C;Park W. S
    • Composites Research
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    • v.17 no.6
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    • pp.22-27
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    • 2004
  • The objective of this work is to design Surface Antenna Structure (SAS) and investigate fatigue behavior of SAS that is asymmetric sandwich structure. This term, SAS, indicates that structural surface becomes antenna. Constituent materials are selected considering electrical properties, dielectric constant and tangent loss as well as mechanical properties. For the antenna performance, SSSFIP elements inserted into structural layers were designed fur satellite communication at a resonant frequency of 12.5 GHz and final demonstration article was $16{\;}{\tiems}{\;}8$ array antenna. From electrical measurements, it was shown that antenna performances were in good agreement with design requirements. In cyclic 4-point bending, flexure behavior was investigated by static and fatigue test. Fatigue life curve of SAS was obtained. The fatigue load was determined experimentally at a 0.75 (1.875kN) load level, Experimental results were compared with single load level fatigue life prediction equations (SFLPE) and in good agreement with SFLPE. SAS concept is the first serious attempt at integration fur both antenna and composite engineers and promises innovative future communication technology.

High Isolation and Linearity MMIC SPDT Switch for Dual Band Wireless LAN Applications (이중대역 무선랜 응용을 위한 높은 격리도와 선형성을 갖는 MMIC SPDT 스위치)

  • Lee, Kang-Ho;Koo, Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.1 s.343
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    • pp.143-148
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    • 2006
  • This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.

2~6 GHz Wideband GaN HEMT Power Amplifier MMIC Using a Modified All-Pass Filter (수정된 전역통과 필터를 이용한 2~6 GHz 광대역 GaN HEMT 전력증폭기 MMIC)

  • Lee, Sang-Kyung;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.7
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    • pp.620-626
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    • 2015
  • In this paper, a 2~6 GHz wideband GaN power amplifier MMIC is designed and fabricated using a second-order all-pass filter for input impedance matching and an LC parallel resonant circuit for minimizing an output reactance component of the transistor. The second-order all-pass filter used for wideband lossy matching is modified in an asymmetric configuration to compensate the effect of channel resistance of the GaN transistor. The power amplifier MMIC chip that is fabricated using a $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors, Corp. is $2.6mm{\times}1.3mm$ and shows a flat linear gain of about 13 dB and input return loss of larger than 10 dB. Under a saturated power mode, it also shows output power of 38.6~39.8 dBm and a power-added efficiency of 31.3~43.4 % in 2 to 6 GHz.

Mineralogical Characterization and Thermal Behaviours of Kaolins from the Southern Parts of Korea (한반도 남부지역에서 산출되는 카올린광물의 고온영역에서의 광물학적 특성 연구)

  • Lee, Su-Jeong;Moon, Hi-Soo
    • Economic and Environmental Geology
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    • v.29 no.3
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    • pp.269-279
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    • 1996
  • Dehydroxylation and mullitization of primary and secondary kaolins were investigated in order to compare and understand the differences in thermal behaviours by DTA and TG up to $1,100^{\circ}C$. Chemical analyses and EPMA of the samples revealed nearly ideal unit-cell formulae of kaolins. The weight losses of dickite and halloysite are 14% and 12.5% on the average, respectively. The activation energies of dehydroxylation of kaolin minerals were calculated according to Kissinger's approach which uses various heating rates in DTA to estimate the activation energy of thermal reactions. The activation energies of dehydroxylation of halloysites from Daemoung and Buksam mines are about $163kJmor^{-1}$ (white), $168kJmor^{-1}$ (pink), and $176kJmor^{-1}$ respectively. The activation energies of dickites collected from Sungsan and Ogmae mines are about $166kJmor^{-1}$ and $387kJmor^{-1}$. The asymmetric shape of endothermic peak in DTA, the relative intensities of OH-stretching bands in FTIR spectroscopy and the existence of residual XRD peaks of the samples which were heated at $550^{\circ}C$ for 2 hours indicate that Sungsan dickite may be more disordered than Ogmae dickite. The new phase formed in thermally treated samples in the range of $900^{\circ}C$ to $1,100^{\circ}C$ was identified as mullite by XRD on the basis of disappearing of the characteristic peaks of kaolins and increasing of amorphous background upon heat treatment. On further heating, loss of more water from dehydroxylate resulted in the formation of mullite and the characteristic X-ray diffraction patterns of mullite began to appear at about $900{\sim}1,000^{\circ}C$ in kaolins.

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Wake Structure of Tip Vortex Generated by a Model Rotor Blade of NACA0015 Airfoil Section (NACA0015익형을 가지는 로터 깃 끝와류의 후류유동구조)

  • Sohn, Yong-Joon;Kim, Jeong-Hyun;Han, Yong-Oun
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.39 no.3
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    • pp.210-217
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    • 2011
  • Evolution of tip vortex generated by a model rotor blade which has a symmetric blade section has been investigated by use of the laser doppler anemometry. Swirl and axial velocity components of tip vortex were measured by the phase averaging technique within one revolution of a rotor blade. It was found that tip vortex becomes matured until 27 degrees and diffuses afterwards with diffusing rate becoming slower compared to the case of the asymmetric blade section, but the tip loss was expected to become more substantial. Swirl velocity components were well fit to n=2 model of Vatistas within measured wake ages, showing the self-similarity exists for the swirl velocity components. The axial components were followed with Gaussian profiles, but had much higher peak values than those of the symmetric blade section.

Differential LC VCO with Enhanced Tank Structure and LC Filtering Techniques in InGaP/GaAs HBT Technology (InGaP/GaAs HBT 공정을 이용하여 향상된 탱크 구조와 LC 필터링 기술을 적용한 차동 LC 전압 제어 발진기 설계)

  • Lee, Sang-Yeol;Kim, Nam-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.2 s.117
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    • pp.177-182
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    • 2007
  • This paper presents the InGaP/GaAs HBT differential LC VCO with low phase noise performance for adaptive feedback interference cancellation system(AF-lCS). The VCO is verified with enhanced tank structure including filtering technique. The output tuning range for proposed VCO using asymmetric inductor and symmetric capacitors withlow pass filtering technique is 207 MHz. The output powers are -6.68 including balun and cable loss. The phase noise of this VCO at 10 kHz, 100 kHz and 1 MHz are -102.02 dBc/Hz, -112.04 dBc/Hz and -130.40 dBc/Hz. The VCO is designed within total size of $0.9{\times}0.9mm^2$.

Compact Triple-Mode Bandpass Filter Using a Cylindrical Dielectric Resonator (원통형 삼중모드 유전체 공진기를 이용한 대역 통과 여파기의 설계)

  • Jang, Geon-Ho;Park, Nam-Shin;Kim, Byung-Chul;Lee, Don-Yong;Won, Jung-Hee;Wang, Xu-Guang
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.1
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    • pp.30-38
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    • 2015
  • In this paper, the design of a compact triple-mode bandpass filter using a high-Q cylindrical dielectric resonator is proposed. In detail, the triple $TE_{01{\delta}}$ modes along three orthogonal axes are used and novel coupling structure in the metallic enclosure is adopted to introduce the coupling between the resonant modes. Due to the cross coupling, the proposed bandpass filter has an asymmetric frequency response with flexible three transmission zeros, one of which can be located very close to the passband edge to provide an extremely sharp skirt characteristic with low insertion loss. The proposed filter is about 60 % miniaturized compared with conventional single-mode dielectric resonator filter. The proposed bandpass filter design is validated by the circuit and 3D EM simulations and measurements compared to the target specifications.

Electron Emission and Degradation of the Pb($\textrm{Zr}_{0.5}\textrm{Ti}_{0.5}$)$\textrm{O}_3$Electron Guns with Various Upper Electrode Sizes (Pb($\textrm{Zr}_{0.5}\textrm{Ti}_{0.5}$)$\textrm{O}_3$전자총의 상부 전극 크기에 따른 전자 방출 및 열화)

  • Kim, Yong-Tae;Yun, Gi-Hyeon;Kim, Tae-Hui;Park, Gyeong-Bong
    • Korean Journal of Materials Research
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    • v.9 no.10
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    • pp.1032-1036
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    • 1999
  • The electron emission and degradation of the ferroelectric Pb($\textrm{Zr}_{0.5}\textrm{Ti}_{0.5}$)$\textrm{O}_3$ ceramics by the pulse electric field have been investigated as a function of the upper electrode diameter. Polarization increased with the decrease of the upper electrode diameter due to the increase of the volume fraction participated in the polarization reversal near the electrode edge. Simulation using ANSYS 5.3 for the electric field distribution showed that the electric field increased near the upper electrode edge of the asymmetric electrode structure. The ferroelectric volume near the upper electrode edge which contributed to the increase of the polarization and the emission charge per electrode diameter were independent on the upper electrode diameter. Polarization and dielectric constant were decreased due to the erosion of the upper electrode with repeating the emission cycles, but they were recovered by the electrode regeneration. The degradation of the ferroelectric surface resulted in the increase of the coercive field and dielectric loss.

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A Study on The Improvement of Profile Tilting or Bottom Distortion in HARC (높은 A/R의 콘택 산화막 에칭에서 바닥모양 변형 개선에 관한 연구)

  • Hwang, Won-Tae;Kim, Gli-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.389-395
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    • 2005
  • The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.