Browse > Article

High Isolation and Linearity MMIC SPDT Switch for Dual Band Wireless LAN Applications  

Lee, Kang-Ho (Dept. of Electronics Eng., University of Incheon)
Koo, Kyung-Heon (Dept. of Electronics Eng., University of Incheon)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.43, no.1, 2006 , pp. 143-148 More about this Journal
Abstract
This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.
Keywords
SPDT; pHEMT; switch; MMIC;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. Tosaka, T. Fujii, K. Miyakoshi, K. Ikenaka, and M. Takahashi, 'An Antenna Switch MMIC Using E/D Mode p-HEMT for GSM/DCS/ PCS/WCDMA Bands Applications,' IEEE RFIC Symp, Dig., pp, 519-522, June 2003
2 A. Gopinnth, and J. B. Rankin, 'GaAs FET RF switches,' IEEE Trans. Electron Devices, Vol. ED-32, no. 7, pp.1272- 1278, 1985   DOI   ScienceOn
3 Y. Tkachenko, L. Kapitan, and D. Bartle, 'High-Performance Power PHEMT for Wireless Communication,' European Microwave Conf. Dig., pp. 1041-1045, 1997   DOI
4 F. McGrath, C. Varmazis, and R. Pratt, 'Novel High Performance SPDT Power Switches Using Multi-gate FETs, ' IEEE MTT-S, pp.839-842, Oct 1991   DOI
5 K. Numata, Y. Takahashi, and T. Meda, 'A +2.4/0V Controlled High Power GaAs SPDT Antenna Switch IC for GSM Application,' IEEE RFIC Symp. Dig., pp. 141-144, June 2002
6 C. Lee, B. Banerjee, and J. Laskar, 'Novel T/R Switch Architectures for MIMO Application,' IEEE MTT-S. Dig., pp.1137-1140, 2004   DOI
7 Takahiro Ohnakado, Satoshi Yamakawa, etc, 'A 0.8 dB Insertion Loss, 23 dB Isolation, 17.5 dBm Power Handling, 5 GHz Transmit/receiver CMOS Switch,' IEEE RFIC Digest, pp. 229-232, 2003
8 M. Masuda, N. Ohbata, H. Ishiuchi, K. Onda, and R. Yamamoto, 'High Power Heterojunction GaAs Switch IC with P-ldB of more than 38dBm for GSM Application,' IEEE GaAs IC Symposium Digest, pp. 229-232, 1998
9 H. Uda, T. Yamada, T. Sawai, K. Nogawa, and Y. Harada, 'High-Performance GaAs Switch IC's Fabricated Using MESFETs with Two Kinds of Pinch-off Voltage and a Symmetrical Pattern Configuration,' IEEE Journal of Solid-state Circuits,Vol. 29, No.10, pp. 1262-1269, Oct 1994   DOI   ScienceOn
10 K. Miyatsuji, and D. Ueda, 'A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System,' IEEE Journal of Solid-state Circuits, Vol. 30, No.9, pp. 979-983, Sep 1995   DOI   ScienceOn
11 C. Tinella, J. M. Fournier, D. Belot, and V. Knopik, 'A High Performance CMOS-SOI Antenna Switch for the 2.5-5-GHz Band,' IEEE Journal of Solid-State Circuits, vol. 38, no. 7, pp. 1279-1283, July 2003   DOI   ScienceOn
12 Z. Gu, D. Johnson, S. Belletete, and D. Fryklund, 'A Low Insertion Loss and High Linearity PHEMT SPDT and SP3T Switch ICs for WLAN 802.l1a/b/g Applications,' IEEE RFIC Symp, Dig., pp, 505-508, 2004
13 Z. Gu, D. Johnson, S. Belletete, and D. Fryklund, 'A High Power DPDT MMIC Switch for Broadband Wireless Applications,' IEEE RFIC Symp, Dig., pp, 687-690, June 2003