• 한국전기전자재료학회논문지
• /
• 제20권9호
• /
• pp.776-779
• /
• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.127-130
• /
• 2001

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

• 한국진공학회지
• /
• 제1권1호
• /
• pp.168-175
• /
• 1992

Ion beam mixing과 질소분위기에서 Rapid Thermal Annealing을 이용하여 형성된 TiSi2 박막의 표면과 계면의 물리적, 전기적 특성이 크게 개선되었으며, 기존 Ti-SALICIDE 의 신뢰도 측면에서 문제가 될 수 있는 Oxide Spacer 상에서의 Lateral Silicide 형성이 최 대한 억제된 수 있었다. 또한 Ti-SALICIDE 공정에서의 Ti/Si와 Ti/SiO2의 Interaction을 반응 조건별로 연구하였다.

• 한국진공학회지
• /
• 제1권1호
• /
• pp.206-211
• /
• 1992

SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2 1018 ions/cm2 at 180kev and post-implantation annealing at $1250^{\circ}C$ for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOI layer was discussed. And the limiting factor to the decrease of the precipitates during post-implantation annealing was discussed also.

• 한국결정성장학회지
• /
• 제10권1호
• /
• pp.42-47
• /
• 2000

일반적인 쵸크랄스키(CZ)방법으로 성장된 실리콘 단결정봉(Ingot)을 가공하여 경면 연마한 후 RTA법으로 수소 분위기에서 열처리하여 실리콘 웨이퍼 표면 및 표면 근처의 특성 변화에 대하여 고찰하였다 수소 열처리를 통하여 표면의 COP (결정결함)가 현저히 감소하는 것을 확인하였고 깊이 5um까지의 영역에서도 결정결함의 밀도가 감소하였다. 또한 수소 열처리에 의해 실리콘 웨이퍼 표면이 에칭 및 실리콘의 재배열에 의해 형성되는 테라스(Terrace) 형태도 관찰되었다.

• Bulletin of the Korean Chemical Society
• /
• 제25권12호
• /
• pp.1859-1862
• /
• 2004

Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.

• 한국전기전자재료학회논문지
• /
• 제15권1호
• /
• pp.75-78
• /
• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제51권6호
• /
• pp.236-239
• /
• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• 센서학회지
• /
• 제13권1호
• /
• pp.66-71
• /
• 2004

Pt-doped zinc oxide (ZnO:Pt) films were deposited by ultrasonic spray pyrolysis. Resistivity variation with Pt concentration was measured. The Pt distribution in ZnO:Pt films was studied through Auger Electron Spectroscopy (AES). The ZnO:Pt films were annealed in the ambient of air, water vapor and ozone, respectively. The variation in crystallographic properties and surface morphologies with respect to the annealing condition was observed by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The resistivity variation of the films with the annealing condition was measured. Finally, Atomic Force Microscopy (AFM) measurements were carried out to study the effects of the annealing on the roughness of ZnO:Pt films.

• 한국전기전자재료학회논문지
• /
• 제22권6호
• /
• pp.462-465
• /
• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.