Effect of Annealing Temperature on the Luminescence of Si Nanocrystallites Thin Films Prepared by Pulsed Laser Deposition
![]() |
김종훈
(연세대학교 전기전자공학과)
전경아 (연세대학교 전기전자공학과) 이상렬 (연세대학교 전기전자공학과) |
1 |
Electroluminescence at Si band gap energy based on metal-oxdie-silicon structures
/
DOI ScienceOn |
2 |
Optical properites of silicon nanocrystallites prepared by excimer laser ablation in inert gas
/
DOI |
3 |
Optically active oxygen-deficiency-related centers in amorphous silicon dioxde
/
DOI ScienceOn |
4 |
Pulsed laser depositon of ZnO thin films for applications of light emission
/
DOI ScienceOn |
5 |
Size dependent photoluminescence from Si nanoclusters produced by laser ablation
/
|
6 |
Strong blue and violet photoluminescence and electrouminescence from germanium implanted and silicon implantes silicon dioxide layers
/
DOI ScienceOn |
7 |
Silicon 박막의 특성과 제조기술 그리고 다양한 소자응용
/
과학기술학회마을 |
8 |
Surface modification of laser ablated YBCO target
/
DOI ScienceOn |
9 |
비정질 실리콘 박막 트랜지스터 액정디스플레이
/
과학기술학회마을 |
10 |
The effect of ion-irradiation and annealing on the luminescence of Si nanocrystals in SiO₂
/
|
11 |
메모리 소자 응용을 위한 펄스레이저 증착법으로 제작된 PLT 박막의 열처리효과
/
과학기술학회마을 |
12 |
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
/
DOI |
13 |
Photoluminescence of silicon nanocluster with reduced size dispersion produced by laser ablation
/
DOI ScienceOn |
![]() |