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http://dx.doi.org/10.4313/JKEM.2002.15.1.075

Effect of Annealing Temperature on the Luminescence of Si Nanocrystallites Thin Films Prepared by Pulsed Laser Deposition  

김종훈 (연세대학교 전기전자공학과)
전경아 (연세대학교 전기전자공학과)
이상렬 (연세대학교 전기전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.1, 2002 , pp. 75-78 More about this Journal
Abstract
Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.
Keywords
Silicon nanocrystal; Annealing; Optoelectronic device; Quantum confinement effect; Pulsed laser deposition;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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