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http://dx.doi.org/10.5012/bkcs.2004.25.12.1859

Luminescence Characteristics of Red Light Emitting (YVO4:Eu Thin-Film Phosphors Deposited on Si Substrate Using Pulsed Laser Deposition  

Kim, Dong-Kuk (Department of Chemistry, Kyungpook National University)
Kang, Wee-Kyung (Department of Chemistry and Research Center for Basic Sciences, Soongsil University)
Publication Information
Bulletin of the Korean Chemical Society / v.25, no.12, 2004 , pp. 1859-1862 More about this Journal
Abstract
Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.
Keywords
Yttrium vanadate; Phosphor; Thin film; Pulsed laser deposition;
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