• Journal of Institute of Control, Robotics and Systems
• /
• v.17 no.6
• /
• pp.566-572
• /
• 2011

In recent semiconductor and FPD (Flat Panel Display) manufacturing processes, high clean-class delivery operation is required more and more for short working time and better product quality. Traditionally SLIM (Single-sided Linear Induction Motor) is widely used in the liner drive applications because of its simplicity in the rail structure. A magnetically levitated (Maglev) unmanned vehicle with SLIM traction, which is powered by a CPS (Contactless Power Supply) can be a high precision delivery solution for this industry. In this paper unmanned FPD-carrying vehicle, which can levitate without contacting the rail structure, is suggested for high clean-class FPD delivery applications. It can be more acceptable for the complex facilities composed with many processes which require longer rails, because of simple rail structure. The test setup consists of a test vehicle and a rounded rail, in which the vehicle can load and unload products at arbitrary position commanded through wireless communications of host computer. The experimental results show that the suggested vehicle and rail have reasonable traction servo and robust electromagnetic suspensions without any contact. The resolution of point servo errors in the SLIM traction system is accomplished under 1mm. The maximum gap error is ${\pm}0.25mm$ with nominal air gap length of 4.0mm in the electromagnetic suspensions. This type of automated delivery vehicle is expected to have significant role in the clean delivery like FPD glass delivery.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.7
• /
• pp.4191-4197
• /
• 2014

Value co-creation is an important business strategy these days in both the business-to-business (B2B) and business-to-consumer (B2C) markets. The aim of this study was to identify specialized resources and competences for value co-creation in the relationship network within a high-tech B2B market. A case of Taiwan Semiconductor Manufacturing Company Limited (TSMC) with customers and partners was chosen as the study case. Based on the observations, contents analysis of the secondary data and unstructured interviews with former TSMC employees, 4 critical resource types (financial, knowledge, efficiency and intellectual resource) and 6 competence types (relational, collaboration, strategic, innovation, managing and service capability), were performed as the principal factors for value co-creation in the relationship network. A research framework that can analyze the value co-creation phenomena in the relationship network was established.

• Journal of Internet Computing and Services
• /
• v.6 no.1
• /
• pp.105-114
• /
• 2005

This paper describes a new measuring technique by analysing multiple time-series patterns. This paper's goal is that extracts a really measured value having a sample pattern which is the best matched with an inputted time-series, and calculates a difference ratio with the value. Therefore, the proposed technique is not a recognition but a measurement. and not a hardware but a software. The proposed technique is consisted of three stages, initialization, learning and measurement. In the initialization stage, it decides weights of all parameters using importance given by an operator. In the learning stage, it classifies sample patterns using LBG and DTW algorithm, and then creates code sequences for all the patterns. In the measurement stage, it creates a code sequence for an inputted time-series pattern, finds samples having the same code sequence by hashing, and then selects the best matched sample. Finally it outputs the really measured value with the sample and the difference ratio. For the purpose of performance evaluation, we tested on multiple time-series patterns obtained from etching machine which is a semiconductor manufacturing.

• Journal of the Korea Convergence Society
• /
• v.11 no.10
• /
• pp.1-7
• /
• 2020

The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO₂/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 10³ ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.

• Journal of Advanced Navigation Technology
• /
• v.18 no.4
• /
• pp.364-370
• /
• 2014

In this paper, high reliable trench formation technique and a novel fabrication techniques for trench gate MOSFET is proposed which is a key to expend application of power MOSFET in the future. Trench structure has been employed device to improve Ron characteristics by shrinkage cell pitch size in DMOSFET and to isolate power device part from another CMOS device part in some power integrated circuit. A new process method for fabricating very high density trench MOSFETs using mask layers with oxide spacers and self-align technique is realized. This technique reduces the process steps, trench width and source and p=body region with a resulting increase in cell density and current driving capability and decrease in on resistance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.523-523
• /
• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.14 no.5
• /
• pp.343-354
• /
• 2009

In this paper, a magnetic-less dc-dc switching converter realizing an integrable power conversion system is described. Instead of magnetic devices, the inductive impedance range of piezoelectric transducers is utilized to store and resonate the energy for soft-switching. Piezoelectric devices have no windings and deliver the power by the electrodes, which lead to mass product through semiconductor-manufacturing process. This paper presents a resonant-type step-up dc-dc power converter employing a disk-type piezoelectric transducer, analyzing the operation principles and the frequency control characteristics. Also, a topology extension of the single stage converter into cascaded multi-stage is presented and analyzed with the operation principles and control characteristics. For verification of the analysis, a 10W output dc-dc power converter hardware was implemented. The hardware experiments shows a good frequency control and power efficiency greater than 96% in the single stage. A hardware prototype of the extended multi-stage one was also realized and tested. The results shows that the converter has the same frequency control performance and high efficiency such as 93%.

• Journal of the Korea Society for Simulation
• /
• v.19 no.4
• /
• pp.111-122
• /
• 2010

In this study, a length adjustment algorithm for cyclic signals in manufacturing process using Time Invariant Feature point Extraction and Matching(TIFEM) is proposed. In order to precisely compensate the length of cyclic signals which have irregular length in the middle of signal as well as in the full length more feature points are needed. The extracted feature must involve information about the pattern of signal and should have invariant properties on time and scale. The proposed TIFEM algorithm extracts features having the intrinsic properties of the signal characteristics at first. By using those extracted features, feature vector is constructed for each time point. Among those extracted features, the only effective features are filtered and are chosen such as basis for the length adjustment. And then the partial length adjustment is performed by matching feature points. To verify the performance of the proposed algorithm, the experiments were performed with the experimental data mimicking the three kinds of signals generated from the actual semiconductor process.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.6
• /
• pp.411-418
• /
• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.39 no.4
• /
• pp.301-307
• /
• 2015

The diameter of a proton beam emanating from the MC-50 cyclotron is about 2-3 mm with Gaussian distribution. This widely irradiated proton beam is not suitable for semiconductor etching, precise positioning, and micromachining, which require a small spot. In this study, a beam cutting method using a microhole is proposed as an economical alternative. We produced a microhole with aspect ratio, average diameter, and thickness of 428, $21{\mu}m$, and 9 mm, respectively, for cutting the proton beam. By using this high-aspect-ratio microhole, we conducted machinability tests on microstructures with sizes of tens of ${\mu}m$. Additionally, the results of simulation using GEANT4 and those of the actual experiment were compared and analyzed. The outcome confirmed the possibility of implementing a micro process technology for the fabrication of three-dimensional microstructures of 20 micron units using the MC-50 cyclotron with the microhole.