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http://dx.doi.org/10.15207/JKCS.2020.11.10.001

Convergence Study on Fabrication and Plasma Module Process Technology of ReRAM Device for Neuromorphic Based  

Kim, Geunho (Department of Computer Engineering, Graduate School, Chungbuk National University)
Shin, Dongkyun (Gosantech)
Lee, Dong-Ju (Department of Physics, Sungkyunkwan University)
Kim, Eundo (THEONE Science, R&D Center)
Publication Information
Journal of the Korea Convergence Society / v.11, no.10, 2020 , pp. 1-7 More about this Journal
Abstract
The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO2/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 103 ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.
Keywords
Biomimetics; Neuromorphic; Variable resistance; ReRAM; Memory device;
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