• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.517-525
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• 2002

The channel region of seep-sub-micrometer MOSFET is non-uniformly doped with pocket implant. Therefore, the advanced threshold voltage model is needed to account for the Short-Channel Effect and Reverse-Short-Channel Effect due to the non-uniform doping concentration in the channel region. In this paper, A scalable analytical model for the MOSFET threshold voltage is developed. The developed model is verified with MEDICI and TSUPREM simulator.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.458-466
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• 2012

A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2014-2020
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• 2017

A compact current model applicable to both single-gate (SG) and double-gate (DG) tunneling field-effect transistors (TFETs) is presented. The model is based on Kane's band-to-band tunneling (BTBT) model. In this model, the well-known and previously-reported quasi-2-D solution of Poisson's equation is used for the surface potential and length of the tunneling path in the tunneling region. An analytical tunneling current expression is derived from expressions of derivatives of local electric field and surface potential with respect to tunneling direction. The previously reported correction factor with three fitting parameters, compensating for superlinear onset and saturation current with drain voltage, is used. Simulation results of the proposed TFET model are compared with those from a technology computer-aided-design (TCAD) simulator, and good agreement in all operational bias is demonstrated. The proposed SG/DG-TFET model is developed with Verilog-A for circuit simulation. A TFET inverter is simulated with the Verilog-A SG/DG-TFET model in the circuit simulator; the model exhibits typical inverter characteristics, thereby confirming its effectiveness.

• 한국농공학회논문집
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• 제56권5호
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• pp.29-36
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• 2014

The purpose of this study is to improve the Generic Agricultural Systems Simulator (GASS) which can simulate various rural systems based on object-oriented model. GASS provides the configuration platform of various system components to simplify integrated agricultural system models such as irrigation systems for rice farming. The new connection and communication modules of GASS improve applicability for modelling diverse systems. The geometric connection of GASS replaces topological connection, and communication protocols expand to analyze not only homogeneous system but also heterogeneous system. In this paper, we applied GASS2 to simulate the water heights of linked tanks and the simulation outputs were verified through comparing with analytical solutions of differential equations. The two new modules make it possible to analyze the 4-tank problem which includes topological and heterogenous issues with GASS2.

• 대한기계학회논문집A
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• 제25권7호
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• pp.1031-1038
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• 2001

In order to verify the analytical methods predicting failure behavior of cracked piping, full-scale pipe tests are crucial in nuclear power plant piping. For this reason, series of international test programs have been conducted. However, full-scale pipe tests require expensive testing equipment and long period of testing time. The objective of this paper is to develop a test system which can economically simulate the full-scale pipe test regarding the integrity evaluation. This system provides the failure behavior of cracked pipe by testing a wide-plate specimen. The system provides the failure behavior of cracked pipe by testing a wide-plate specimen. The system was developed for the integrity evaluation of nuclear piping based on the methodology of hardware-in-the-loop (HiL) simulation. Using this simulator, the piping integrity can be evaluated based on the elastic-plastic behavior of full-scale pipe, and the high cost full-scale pipe test may be replaced with this economical system.

• 대한기계학회논문집A
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• 제36권11호
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• pp.1413-1420
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• 2012

철도차량의 동적 거동 및 안정성 등을 예측하고 물리적인 특성을 이해하기 위하여 철도선진국인 영국, 프랑스, 일본 등에서는 축소모델 제작 및 시험하는 방법과 컴퓨터 시뮬레이션을 통하여 해석적으로 접근하는 방법이 사용되고 있다. 실물 규모의 동특성 시험은 대규모의 시험설비 구축에 따른 많은 비용과 시간의 소요, 그리고 시험 환경 설정의 어려움 등의 문제점이 발생하게 된다. 이러한 단점들을 극복하고자 상사법칙을 적용한 축소대차 모델을 이용하여 동적 시험 및 컴퓨터 시뮬레이션을 통한 해석적 연구를 수행하고 있다. 본 연구에서는 소형탈선시뮬레이터를 이용한 1/5 축소대차의 주행안정성 시험에서 신뢰성이 검증된 해석모델을 이용하여 주행안정성에 미치는 매개변수 중 주행속도, 차체 하중의 2가지 변수에 따른 1/5 축소대차의 주행안정성 해석을 수행하고, 그에 따른 동적특성을 검토하였다.

• Structural Engineering and Mechanics
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• 제48권6호
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• pp.757-774
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• 2013

An integrated simulation tool for multilayer stepped pyramidal structures is presented. The tool, based on a semi-analytical mathematical strategy, is able to calculate the temperature distributions and thermal stresses at the interfaces between the layers of such structures. The core of the thermal solver is the analytical simulator for power electronic devices, DJOSER, which has been supplemented with a mechanical solver based on the finite-element method. To this end, a new ele-ment is proposed whose geometry is defined by its mean surface and thickness, just as in a plate. The resulting mechanical model is fully three-dimensional, in the sense that the deformability in the direction orthogonal to the mean surface is taken into account. The dedicated finite element code developed for solving the equilibrium problem of structures made up of two or more superimposed plates subjected to thermal loads is applied to some two-layer samples made of silicon and copper. Comparisons performed with the results of standard finite element analyses using a large number of brick elements reveal the soundness of the strategy employed and the accuracy of the tool developed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.110-119
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• 2007

A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resistance and device capacitance in DM DG FD SOI MOSFET is carried out with Pearson-IV type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. These parameters are categorically derived keeping view of potential at the center (${\phi}_c$) of the double gate SOI MOSFET as it is more sensitive than the potential at the surface (${\phi}_s$). The proposed structure is such that the work function of the gate material (both sides) near the source is higher than the one near the drain. This work demonstrates the benefits of high performance proposed structure over their single material gate counterparts. The results predicted by the model are compared with those obtained by 2D device simulator ATLAS to verify the accuracy of the proposed model.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권1호
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• 전자공학회논문지D
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• 제36D권1호
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• pp.90-99
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• 1999

본 논문에서는 반응로 안에서 쌍극성 확산장의 거리 확장에 따르는 앞덮개(Presheath)영역에서의 효과를 고려하고, 앞덮개 영역 내에서 이온과 중성자간의 충돌을 고려한 입사각 분포에 따른 에너지 플럭스를 계산하였다. 이론의 각분포 현상과 에너지 플럭스 분포를 이온의 온도와 함께 앞덮개 효과를 고려된 새로운 근사 해석적 모델을 제시한다. 실제 식각 공정에 대한 실험결과 충돌이 없는 덮개에서도 이온의 입사각이 산란되는 현상이 나타난다. 이 현상은 이온의 앞덮개지역을 통과하면서 쌍극성 확산장(ambipolar diffusion field)에 의해 운동에너지를 얻게 되는데, 이때 얻어진 운동에너지가 가스 분자 충돌에 의해 변화는 효과 때문이라고 볼 수 있다. 제안된 근사적 해석모델을 이용하여 트렌치에서의 중착 형상을 모의실험 하였다.