• Analytical Science and Technology
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• v.7 no.2
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• pp.155-164
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• 1994

A conventional Grimm-type glow discharge source was constructed and applied to radio-frequency(13.56MHz) discharge for metal and ceramic analysis. We investigated the emission spectrum for aluminium and aluminium oxide and the influence of discharge operating paramaters including argon pressure, rf-power and DC-bias voltages at the sample-side electrode. Scanning Electron Microscope(SEM) also was used to investigate the effect of rf-sputtering on the microstructure formation of the aluminium oxide. Linear analytical calibration curves were constructed for Manganese and zinc element in samples of low alloy steel(BAS 401-405) and brass(NIST 1108-1117).

• Journal of information and communication convergence engineering
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• v.7 no.1
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• pp.57-61
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• 2009

This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.20-26
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• 1993

The base-collector capacitance of an npn bipolar transistor in bipolar or BiCMOS technology has significant influence on the switching performances, and comprises pnjunction component and MOS component. Both components have complicated dependences on the isolation oxide structure, epitaxial doping density, and bias voltage. Analytical/empirical formulas for both components are derived in this paper for a generic isolation structure as a function of epitaxial doping density and bias voltage based on some theoretical understanding and two-dimensional device simulations. These formulas are useful in estimating the effect of device isoation schemes on the switching speed of bipolar transistors.

• Geomechanics and Engineering
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• v.9 no.4
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• pp.427-445
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• 2015

By means of finite element numerical simulation and pseudo-static method, the shallow-buried bilateral bias twin-tube tunnel subject to horizontal and vertical seismic forces are researched. The research includes rupture angles, the failure mode of the tunnel and the distribution of surrounding rock relaxation pressure. And the analytical solution for surrounding rock relaxation pressure is derived. For such tunnels, their surrounding rock has sliding rupture planes that generally follow a "W" shape. The failure area is determined by the rupture angles. Research shows that for shallow-buried bilateral bias twin-tube tunnel under the action of seismic force, the load effect on the tunnel structure shall be studied based on the relaxation pressure induced by surrounding rock failure. The rupture angles between the left tube and the right tube are independent of the surface slope. For tunnels with surrounding rock of Grade IV, V and VI, which is of poor quality, the recommended reinforcement range for the rupture angles is provided when the seismic fortification intensity is VI, VII, VIII and IX respectively. This study is expected to provide theoretical support regarding the ground reinforcement range for the shallow-buried bilateral bias twin-tube tunnel under seismic force.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.3
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• pp.424-433
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• 2001

We present a new electrostatic repulsive-force microactuator using a lateral repulsive force induced by an asymmetric distribution of electrostatic field. The lateral repulsive force has been characterized by a simple analytical equation, derived from a finite element simulation. A set of repulsive force polysilicon microactuators has been designed and fabricated by a 4-mask surface-micromachining process. Static and dynamic micromechanical behavior of the fabricated microactuators has been measured at the atmospheric pressure for a varying bias voltage. The static displacement of the fabricated microactuator, proportional to the square of the DC bias voltage, is obtained as 1.27 $\mu\textrm{m}$ for the DC bias voltage of 140V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the DC bias voltage increases from 60V to 140V. The measured quality-factor varies from 12 to 13 for the bias volatge range of 60V∼140V. The characteristics of the electrostatic repulsive-force have been discussed and compared and compared with those of the conventional electrostatic attractive-force.

• Journal of the Korean Regional Science Association
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• v.14 no.2
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• pp.35-50
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• 1998

This paper examines the determinants of imbalanced regional development in Korea during the period of 1985-1995. The review of previous analytical techniques have been used to analyze the determinants of disparities in regional development of disparities in regional development, but few has applied the regression technique which reduces a bias due to heterogeneity across region. The results of the study show that Kmenta model with per capita GRDP as dependent variable can reduce the heterogeneity bias in regional development and can minimize the statical errors in estimation and interpretation of the coefficients of the explanatory variables. According to the results of Kmenta model, urban infrastructure such as roads, information and communication facilities are major causes of regional disparity over the period of 1985-1995. The results of the study also indicate that local government should devote their policy efforts to identify and utilize the unique soci-economic characteristics of each locality in the process of regional development.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• Composites Research
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• v.23 no.5
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• pp.8-14
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• 2010

Three types of glass woven fabrics (plain, balanced twill, and unbalanced twill) having various sample sizes and aspect ratios were tested using the bias-extension tests. Real-time deformation images, force, and displacement data were collected. For the bias-extension test, the shear angle of the fabrics from the equation based on the crosshead displacement and fabric size was compared with direct manual measurements of the warp and weft angles as well as the optical measurement software. To determine the shear force, an analytical equation was introduced considering the kinematics of the bias-extension test. The obtained shear behaviors were further compared with the results by the trellis-frame test. The optical measurement methods showed that the mathematical method was reasonable before the shear angle of the fabrics reaches $30^{\circ}$ in the bias-extension tests. Also, the bias-extension test gave consistent behaviors with the trellis-frame test only for isotropic and homogeneous fabrics such as balanced plain and twill weaves.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.17-23
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• 2010

In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.1-7
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• 2009

In this paper, a simple analytical model for deriving the threshold voltage of a short-channel intrinsic-body SDG SOI MOSFET is suggested. Using the iteration method, both Laplace equations in intrinsic silicon body and gate oxide are solved two-dimensionally. Obtained potential distributions in both regions are expressed in terms of fourth and fifth-order of the coordinate perpendicular to the silicon channel direction. Making use of them, the surface potential is obtained to derive the threshold voltage in a closed-form. Simulation results show the fairly accurate dependencies of the threshold voltage on the various device parameters and applied bias voltages.