• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.9.2-9.2
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• 2008

• 산업기술연구
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• 제16권
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• pp.157-168
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• 1996

The deposition characteristics of ultrafine $SiO_2$ particles were investigated in a tube furnace reactor theoretically and experimentally controlling tube wall temperature in deposition zone. The model equations such as mass and energy balance equations and aerosol dynamic equations inside reactor and deposition tube were solved to predict the particle growth and deposition. The particle size and deposition efficiencies of $SiO_2$ particles were calculated, changing the process conditions such as tube furnace setting temperature, total gas flow rate inlet $SiCl_4$ concentration and were compared with the experimental results.

• 한국결정성장학회지
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• 제7권2호
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• pp.235-243
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• 1997

$YBa_2Cu_3O_x$ 고온 초전도체 상을 MgO 단결정위에 증착시키기 위하여 액상의 에어로 졸 입자를 저온 플라즈마의 화학증기 증착로안에 유입하였다. 플라즈마의 분포를 조절하기 위한 반응로의 설계에 따라 초전도체상의 미세구조가 변화하는 양상을 관찰하였으며, 이때 증착 기판 위에서 관찰되는 입자들의 생성원인에 대하여 고찰하였다. 입자생성의 주된 원인으로는 불안정한 플라즈마의 분포와 출발원료의 낮은 기화속도에 기인하는 것으로 나타났다. 또한 증착속도는 출발원료가 기화되는 곳으로부터 멀어질수록 급격히 감소하는 것으로 밝혀졌다.

• 한국결정성장학회지
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• 제6권2호
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• pp.229-237
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• 1996

액상의 미립자를 이용하여 저온 플라즈마 반응로 안에서 $YBa_{2}Cu_{3}O_{x}$ 초전도체상을 MgO 단결정 위에 in-situ 증착하였다. 금속화합물의 용해도, 분해온도와 용매의 증기압이 이공정 방법에서 중용한 인자로 나타났으며, 초전도체상의 증착실험 조건은 산소분압이 0.3에서 2.7 kPa, 증착온도가 $800^{\circ}C$에서 $940^{\circ}C$까지이었다. 초전도체상을 위한 최적의 증착조건은 CuO 상전이선에 근접하게 나타났다.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.92-96
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• 2009

A new precursor [$Zr(acac)_{3}(H_{2}O)_{2}$] was synthesized by Sonochemical technique and used to deposit thin $ZrO_{2}$ film on quartz and ceramic substrate via ultrasonic aerosol assisted chemical vapour deposition (UAACVD) at 300 ${^{\circ}C}$ in oxygen environment followed by annealing of the sample for 2-3 minutes at 500 ${^{\circ}C}$ in nitrogen ambient. The molecular structure of the precursor determined by single crystal X-ray analysis revealed that the molecules are linked through intermolecular hydrogen bonds forming pseudo six and eight membered rings. DSC and TGA/FTIR techniques were used to determine thermal behavior and decomposition temperature of the precursor and nature of evolved gas products. The optical measurement of annealed $ZrO_{2}$ film with tetragonal phase shows optical energy band gap of 5.01 eV. The particle size, morphology, surface structure and composition of deposited films were investigated by XRD, SEM and EDX.

• 한국입자에어로졸학회지
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• 제6권1호
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• pp.21-27
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• 2010

New process consisting of electrospray and epitaxial crystal growth processes was applied to the preparation of c-plane oriented barium ferrite ($BaFe_{12}O_{19}$) thin film for high density magnetic recording media. Sodium citrate aided process was proper to preparation of amorphous $BaFe_{12}O_{19}$ nanoparticles with geometric mean diameter of 3 nm and geometric standard deviation of 1.1. The electrospray was applicable to the prepare of amorphous $BaFe_{12}O_{19}$ thin film on a substrate, and the film thickness could be controlled by adjusting the electrospray deposition time. The c-plane oriented $BaFe_{12}O_{19}$ thin film was successfully prepared by 3 step annealing process of the $BaFe_{12}O_{19}$ amorphous film on a sapphire($Al_2O_3$) substrate; annealing at $350^{\circ}C$ for 30 min, annealing at $500^{\circ}C$ for 30 min, and annealing at $700^{\circ}C$ for 60 min.

• Nuclear Engineering and Technology
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• 제48권4호
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• pp.870-880
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• 2016

A steam generator tube rupture (SGTR) event with a stuck-open safety relief valve constitutes one of the most serious accident sequences in pressurized water reactors (PWRs) because it may create an open path for radioactive aerosol release into the environment. The release may be mitigated by the deposition of fission product particles on a steam generator's (SG's) dry tubes and structures or by scrubbing in the secondary coolant. However, the absence of empirical data, the complexity of the geometry, and the controlling processes have, until recently, made any quantification of retention difficult to justify. As a result, past risk assessment studies typically took little or no credit for aerosol retention in SGTR sequences. To provide these missing data, the Paul Scherrer Institute (PSI) initiated the Aerosol Trapping In Steam GeneraTor (ARTIST) Project, which aimed to thoroughly investigate various aspects of aerosol removal in the secondary side of a breached steam generator. Between 2003 and 2011, the PSI has led the ARTIST Project, which involved intense collaboration between nearly 20 international partners. This summary paper presents key findings of experimental and analytical work conducted at the PSI within the ARTIST program.

• 한국결정성장학회지
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• 제30권5호
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• pp.183-188
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• 2020

에어로졸 증착법에 의해서 상온에서 5~10 ㎛ 두께의 PZN-PZT(0 %, 20 %, 40 %) 복합체의 막을 실리콘/사파이어 기판 위에서 제조하였다. PZN의 농도는 0 %, 20 % 및 40 %까지 첨가하였다. 실리콘기판 및 사파이어 기판 위에서 증착된 막은 전기로에서 700℃ 및 900℃에서 각각 어닐링처리 하였으며 900℃에서 어닐링한 경우의 잔류분극 및 유전 상수 등의 전기적 특성이 700℃에서의 특성보다 우수하였다. 특히 900℃에서 어닐링한 2PZN-8PZT 막의 경우 1200℃에서 소결한 같은 조성의 벌크재에서 얻은 값과 상호 비교하였다. 열처리 온도가 높아짐에 따라 유전상수가 증가하는 경향을 보이는데 이는 후열처리에 따른 막의 결정성의 향상과 입자 성장으로 기인한다.

• 한국전기전자재료학회논문지
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• 제30권9호
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• pp.541-545
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• 2017

$Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films with a thickness of $5{\sim}10{\mu}m$ at the morphotropic phase boundary were fabricated by aerosol-deposition (AD), and their phase evolution and electrical properties were investigated. The microstructure of the AD PZT films revealed nanosized grains with a low crystallinity and a dense structure at room temperature. The AD PZT films showed a mixture of tetragonal and rhombohedral phases. The post-annealing temperature was varied to study the phase transition behavior. The crystallinity of the AD PZT films was enhanced by annealing at 450, 550, and $650^{\circ}C$ for 2 h. At $650^{\circ}C$, the tetragonal and rhombohedral phases reacted to form a bridge phase between the two phases. The polarization-electric field hysteresis loops of the AD PZT film annealed at $650^{\circ}C$ exhibited a smaller cohesive field and a lower slim hysteresis than the films annealed at 450 and $550^{\circ}C$.

• 한국결정성장학회지
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• 제25권6호
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• pp.239-244
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• 2015

에어로졸 증착법에 의해 실리콘 기판위에 $10{\sim}20{\mu}m$의 두께를 가진 PZT 후막을 제조한 후 $700^{\circ}C$에서 어닐링처리하였다. PZT 분말에 의해 제조된 막은 임피던스 분석기(impedance analyzer)와 쇼여-타워 서킷(Sawyer-Tower circuit)으로 분석하였다. PZT 분말은 통상적인 고상반응법 및 솔-젤 법으로 준비되었다. 고상반응법으로 만들어진 분말을 사용한 $10{\mu}m$ 두께 PZT 막의 잔류분극, 항전계 및 유전상수는 각각 $20{\mu}C/cm^2$, 30 kV/cm 그리고 1320이었다. 한편 솔-젤 법으로 제조된 분말을 사용한 경우의 유전상수는 635로 비교적 낮은 값을 나타낸다. 이는 어닐링시 생기는 발생하는 유기물에 의한 기공의 존재 때문이다.