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http://dx.doi.org/10.6111/JKCGCT.2015.25.6.239

Electrical properties of piezoelectric PZT thick film by aerosol deposition method  

Kim, Ki-Hoon (Department of Materials Science and Engineering, Pukyong National University)
Bang, Kook-Soo (Department of Advanced Materials System Engineering, Pukyong National University)
Park, Dong-Soo (Functional Materials Group, Korea Institute of Machinery and Materials)
Park, Chan (Department of Materials Science and Engineering, Pukyong National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.25, no.6, 2015 , pp. 239-244 More about this Journal
Abstract
Lead zirconate titanate (PZT) thick films with thickness of $10{\sim}20{\mu}m$ were fabricated on silicon substrate by aerosol deposition method. As-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$. The electrical properties of films deposited by PZT powders were characterized using impedance analyzer and Sawyer-Tower circuit. The PZT powder was prepared by both conventional solid reaction process and sol-gel process. The remanent polarization, coercive field, and dielectric constant of the $10{\mu}m$ thick film with solid reaction process were $20{\mu}C/cm^2$, 30 kV/cm and 1320, respectively. On the other hand, the PZT films by sol-gel process showed a poor dielectric constant of 635. The reason was probably due to the presence of pores produced from organic residue during annealing.
Keywords
PZT powder; Sol-gel process; Aerosol deposition method; Dielectric constant; Piezoelectric coefficient; Hysteresis loop; Remnant polarization; Coercive field;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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