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http://dx.doi.org/10.6111/JKCGCT.2020.30.5.183

Electrical properties of PZN-PZT thick films formed by aerosol deposition process  

Tungalaltamir, Ochirkhuyag (Department of Materials Science and Engineering, Pukyong National University)
Jang, Joo-Hee (Department of Materials Science and Engineering, Pukyong National University)
Park, Yoon-Soo (Department of Materials Science and Engineering, Pukyong National University)
Park, Dong-Soo (Functional Materials Group, Korea Institute of Machinery and Materials)
Park, Chan (Department of Materials Science and Engineering, Pukyong National University)
Abstract
Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 ㎛ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700℃. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900℃. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900℃ were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200℃. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.
Keywords
PZN; PZT; Relaxor; Aerosol-deposition process; Electrical properties;
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