Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Electrical properties of piezoelectric PZT thick film by aerosol deposition method

에어로졸 증착법에 의한 압전 PZT 후막의 전기적 특성

  • Kim, Ki-Hoon (Department of Materials Science and Engineering, Pukyong National University) ;
  • Bang, Kook-Soo (Department of Advanced Materials System Engineering, Pukyong National University) ;
  • Park, Dong-Soo (Functional Materials Group, Korea Institute of Machinery and Materials) ;
  • Park, Chan (Department of Materials Science and Engineering, Pukyong National University)
  • 김기훈 (부경대학교 재료공학과) ;
  • 방국수 (부경대학교 신소재시스템공학과) ;
  • 박동수 (재료연구소 기능성재료그룹) ;
  • 박찬 (부경대학교 재료공학과)
  • Received : 2015.10.23
  • Accepted : 2015.11.06
  • Published : 2015.12.31
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Abstract

Lead zirconate titanate (PZT) thick films with thickness of $10{\sim}20{\mu}m$ were fabricated on silicon substrate by aerosol deposition method. As-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$. The electrical properties of films deposited by PZT powders were characterized using impedance analyzer and Sawyer-Tower circuit. The PZT powder was prepared by both conventional solid reaction process and sol-gel process. The remanent polarization, coercive field, and dielectric constant of the $10{\mu}m$ thick film with solid reaction process were $20{\mu}C/cm^2$, 30 kV/cm and 1320, respectively. On the other hand, the PZT films by sol-gel process showed a poor dielectric constant of 635. The reason was probably due to the presence of pores produced from organic residue during annealing.

에어로졸 증착법에 의해 실리콘 기판위에 $10{\sim}20{\mu}m$의 두께를 가진 PZT 후막을 제조한 후 $700^{\circ}C$에서 어닐링처리하였다. PZT 분말에 의해 제조된 막은 임피던스 분석기(impedance analyzer)와 쇼여-타워 서킷(Sawyer-Tower circuit)으로 분석하였다. PZT 분말은 통상적인 고상반응법 및 솔-젤 법으로 준비되었다. 고상반응법으로 만들어진 분말을 사용한 $10{\mu}m$ 두께 PZT 막의 잔류분극, 항전계 및 유전상수는 각각 $20{\mu}C/cm^2$, 30 kV/cm 그리고 1320이었다. 한편 솔-젤 법으로 제조된 분말을 사용한 경우의 유전상수는 635로 비교적 낮은 값을 나타낸다. 이는 어닐링시 생기는 발생하는 유기물에 의한 기공의 존재 때문이다.

Keywords

References

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