• Journal of Information Display
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• v.13 no.3
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• pp.97-100
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• 2012

We have conducted two kinds of the so-called charge-compensated aliovalent element substitutions to control the photoluminescence properties of $NaAlSiO_4:Eu^{2+}$ with a special focus on the enhancement of the excitation intensity at 400 nm. The aliovalent element substitutions include cation-cation and cation-anion co-substitutions according to the general formulas $Na_{1-x}M_xAl_{1+x}Si_{1-x}O_4:Eu^{2+}$ and $Na_{1-x}M_xAlSiO_{4-x}N_x:Eu^{2+}$ (M = $Mg^{2+}$, $Ca^{2+}$, and $Sr^{2+}$), respectively. The increase in the relative excitation intensity at 400 nm has been achieved in both types of the co-substitutions. Thus, the present research has demonstrated the effectiveness of the charge-compensated element substitution.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.294-299
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• 1994

CHF$_{3}$/CH$_{4}$Ar 플라즈마에 의해 형성된 산화막 식각 잔류물의 화학구조와 이 잔류물의 제거를 위한 세정방법을 x-ray photoelectron spectroscopy를 이용하여 조사하였다. 잔류무르이 구조는 CF$_{x}$-polymer와 Si-C, Si-O 결합으로 이루어진 SiO$_{y}$ C$_{z}$ 이었다. CF$_{4}$O$_{2}$ 플라즈마에 의한 silicon light etch는 산화막 식각 잔류물인 SiO$_{y}$ C$_{z}$ 층과 손상된 실리콘 표면을 제거하엿으며 NH$_{4}$OH-H$_{2}$O$_{2}$과 HF용액으로 완전히 제거되는 CF$_{x}$-polymer/SiO$_{x}$층을 남겼다. 100.angs.정도의 silicon light etch는 minority carrier life time과 thermal wave signal값을 초기 웨이퍼 수준까지 회복시켰으며 접합누설 전류도 거의 습식 식각 공정수준까지 감소시켰다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.66-67
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• 2006

We studied nematic liquid crystal (NLC) alignment effect on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. Pretilt angle and thermal stability characteristic as well as NLC alignment effect were investigated. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and pretilt angle was about $90^{\circ}$. The thermal stability of the $SiO_x$ thin film was sustained by $200^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.451-452
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• 2006

We studied the electro-optical characteristic of vertical alignment liquid crystal display(VA-LCD) on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. LC alignment characteristic showed homeotropic alignment, and pretilt angle was about $90^{\circ}$. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and the electro-optical characteristic of the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system was excellent.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.453-456
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• 1998

The electrical properties of $Si_{1-x}Ge_{x}$ samples have been investigated. The sample structures were grown by MBE (molecular geam epitaxy) with Ge mole-fraction of x=0.0, x=0.05, x=0.1, and x=0.2. To examine the influence of the thermal processing, the $O_{2}$ and N$_{2}$ process were performed at 800[.deg. C] and 900[.deg. C], respectively. After this thermal process, hall measurements have been done over a wide range of the ambient temperature between 320[.deg. K] and 10[.deg. K] to find the temperature dependence using the comparessed-He gas system. The Ge-rich layer has been formed at the $SiO_{2}$/SiGe interface and it has an effect on the hall mobility. And it has been found that hall mobility was increased by the $N_{2}$ annealing process comparing with dry oxidation process at both 800[.deg.C] and900[.deg. C].

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.521-528
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• 2008

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-$SiO_x$) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-$SiO_x$ decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between $150^{\circ}\;and\;200^{\circ}$. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-$SiO_x$ thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-$SiO_x$ showed homogeneous alignment; however, in the lower case (x < 1.6), liquid crystals showed homeotropic alignment.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.86-86
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• 1997

• Corrosion Science and Technology
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• v.9 no.2
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• pp.81-86
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• 2010

The mechanisms of selective oxidation of intercritically annealed CMnAl TRIP steels in a Continuous Galvanizing Line (GCL) were studied by cross-sectional observation of the surface and sub-surface regions by means of High Resolution Transmission Electron Microscopy (HR-TEM). The selective oxidation and nitriding of an intercritically annealed CMnAl TRIP steel in a controlled dew point 10%$H_2+N_2$ atmosphere resulted in the formation of c-xMnO.$MnO_2$ (1${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) particles on the steel surface. Single crystal c-xMnO.$SiO_2$ ($2{\leq}x{\leq}4$) oxide particles were also observed on the surface. A thin film of crystalline c-xMnO.$SiO_2$ (2${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) was present between these particles. In the sub-surface region, internal oxidation, nitriding and intermetallic compound formation were observed. In the first region, large crystalline c-xMnO.$SiO_2$ ($1{\geq}x{\geq}2$) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) oxides particles were present. In the second region, c-AlN particles were observed, and in a third region, small $MnAl_x$ (x>1) intermetallic compound particles were observed.

• Journal of Surface Science and Engineering
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• v.34 no.1
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• pp.33-38
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• 2001

10cm-diameter Si(100)∥$1.3\mu\textrm{m}$-X$1.3_2$X$1.3\mu\textrm{m}$-$SiO_2$∥Si(100) afers were prepared using a fast linear annealing (FLA) equipment. 1.3$\mu\textrm{m}$-thick $SiO_2$ films were grown by dry oxidation process. After cleaning and premating the wafers in a class 100 clean room, they were heat treated using with the FLA and conventional electric furnace. Bonded area and bond strength of wafer pairs were measured using a infrared (IR) camera and razor blade crack opening method, respectively. It was confinmed that the bonded area by FLA was around 99% and the bond strength value reached 2172mJ/$\m^2$, which is equivalent to theoritical bond strength. Our result implies that thick $SiO_2$ SOI may be prepared more easily by using $SiO_2$$SiO_2$ bonding interfaces then those of Si/$SiO_2$'s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.969-973
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• 2009

In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.