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http://dx.doi.org/10.4313/JKEM.2009.22.11.969

Electrical and Optical Properties of SiO2-doped ZnO Films Prepared by Rf-magnetron Sputtering System  

Bae, Kang (대구가톨릭대학교 전자공학과)
Sohn, Sun-Young (대구가톨릭대학교 전자공학과)
Hong, Jae-Suk ((주)CTC)
Kim, Hwa-Min (대구가톨릭대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.11, 2009 , pp. 969-973 More about this Journal
Abstract
In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.
Keywords
TCO film; $SiO_2$-doped ZnO; Rf-magnetron sputtering; Resistivity;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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