• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1121-1127
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• 1994

The accelerated degradation phenomena in amorphous silicon thin film transistors due to both electrical stress and visible light illumination under the elevated temperature have been investigated systematically as a function of gate bias, light intensity, and stress time. It has been found that, in case of electrical stress, the thrshold voltage shifts of a-Si:H TFT's may be attributed to the defect creation process at the early stage, while the charge trapping phenomena may be dominant when the stressing periods exceed about 2 hours. It has been also observed that the degradation in the device characteristics of a-Si:H TFT's is accelerated due to multiple stress effects, where the defect creation mechanism may be more responsible for the degradation rather than the charge trapping mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.844-847
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1040-1043
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• 2004

As time goes by, the market demand increases and each LCD panel manufacturing company makes every effort to produce more panels in a limited time. It is necessary to reduce the cost and time of production for the improvement of productivity in manufacturing companies. The increased speed of thin films growth used in the TFT process brings improvement of productivity but it is also accompanied by a drop in display quality due to a characteristic change of the thin film. So in our dissertation, we deal with the increased speed of a-Si layer growth and the proportioned a drop in characteristic quality. We discuss a drop in display quality by a characteristic change of a-Si layer and we propose a counter-plan through panel design improvement. We have already applied our plan to the 15" XGA panel and confirmed the improved result.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.7
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• pp.670-674
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• 1991

This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.16-19
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• 2013

Frequency filters with various filtering wavelengths were used in the photoelectric characterization of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and the experimental results were described and analyzed in terms of the photon energy spectral characteristics calculated from the integration of the photon energy and the spectral intensity of transmitted backlight through the filters at each wavelength. From the comparison of the photocurrents and the calculated photon energy spectrums for the filtered ranges of wavelength, it was possible to conclude that the photocurrents are closely related to the photon energy spectrums of the backlight.

• Journal of Information Display
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• v.6 no.3
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• pp.12-17
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• 2005

The need for low cost, flexible, thin film transistor (TFT) display backplanes has focused attention on new processing techniques and materials. We report the development of TFT backplane technology based entirely on jet-printing, using a combination of additive and subtractive processing, to print active materials or etch masks. The technique eliminates the use of photolithography and has the potential to reduce the array manufacturing cost. The printing technique is demonstrated with both amorphous silicon and polymer semiconductor TFT arrays, and we show results of small prototype displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.57-58
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• 2008

Microcrystalline (${\mu}c$) silicon thin films were prepared on glass by plasma-enhanced-chemical-vapor-deposition (PECVD) at various substrate temperature, and dilution ratio of $H_2$ with $SiH_4$. The structural and optical properties of. the ${\mu}c-Si$ thin films were investigated using XRD and UV-VIS spectrophotometer. The ${\mu}c-Si$ thin film with 42 nm grain size was grown at optimal condition of 2.5 Torr, spacing between electrodes of 3cm, deposition time of 3000s, RF power of 200W, substrate temperature of $350^{\circ}C$, $SiH_4$ ($20%SiH_4$+80%He) of 50sccm, and $H_2$ of 100sccm.

• Journal of Information Display
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• v.6 no.2
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• pp.12-15
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.405-407
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• 2004

We have optimized the low temperature growth of microcrystalline silicon at 80$^{\circ}C$. This material has been used to fabricate bottom gate ${\mu}c$-Si:H TFTs by using a layer-by-layer nitrogenation process. By using this process the amorphous incubation layer can be converted into silicon nitride and leads to an increase in field effect mobility of the TFT